Datasheets
FDS6898A by:
onsemi
Fairchild Semiconductor Corporation
onsemi
Rochester Electronics LLC
Not Found

Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 9.4A, 14mΩ, SOIC-8, 2500-REEL

Part Details for FDS6898A by onsemi

Results Overview of FDS6898A by onsemi

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Applications Energy and Power Systems Renewable Energy Automotive

FDS6898A Information

FDS6898A by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FDS6898A

Part # Distributor Description Stock Price Buy
DISTI # 54K3604
Newark Mosfet, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds N Channel:20V, Drain Source V... oltage Vds P Channel:20V, Continuous Drain Current Id N Channel:9.4A, Continuous Drain Current Id P Channel:9.4A, No. Of Pins:8Pins Rohs Compliant: Yes |Onsemi FDS6898A more RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 2,500 $0.4650
  • 5,000 $0.4480
$0.4480 / $0.4650 Buy Now
DISTI # FDS6898ACT-ND
DigiKey MOSFET 2N-CH 20V 9.4A 8SOIC Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 7216
In Stock
  • 1 $1.6300
  • 10 $1.0320
  • 100 $0.6896
  • 500 $0.5427
  • 1,000 $0.4954
  • 2,500 $0.4442
  • 5,000 $0.4126
  • 7,500 $0.4075
$0.4075 / $1.6300 Buy Now
DISTI # FDS6898A
Avnet Americas Transistor MOSFET Array Dual N-CH 20V 9.4A 8-Pin SOIC T/R - Tape and Reel (Alt: FDS6898A) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
  • 2,500 $0.4177
  • 5,000 $0.4113
  • 10,000 $0.4050
  • 15,000 $0.3987
  • 20,000 $0.3923
$0.3923 / $0.4177 Buy Now
DISTI # FDS6898A
Avnet Americas Transistor MOSFET Array Dual N-CH 20V 9.4A 8-Pin SOIC T/R - Tape and Reel (Alt: FDS6898A) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
  • 2,500 $0.4177
  • 5,000 $0.4113
  • 10,000 $0.4050
  • 15,000 $0.3987
  • 20,000 $0.3923
$0.3923 / $0.4177 Buy Now
DISTI # FDS6898A
Avnet Americas Transistor MOSFET Array Dual N-CH 20V 9.4A 8-Pin SOIC T/R - Tape and Reel (Alt: FDS6898A) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
  • 2,500 $0.4177
  • 5,000 $0.4113
  • 10,000 $0.4050
  • 15,000 $0.3987
  • 20,000 $0.3923
$0.3923 / $0.4177 Buy Now
DISTI # FDS6898A
Avnet Americas Transistor MOSFET Array Dual N-CH 20V 9.4A 8-Pin SOIC T/R - Tape and Reel (Alt: FDS6898A) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.3859
  • 5,000 $0.4113
  • 10,000 $0.3767
  • 15,000 $0.3749
  • 20,000 $0.3722
$0.3722 / $0.4113 Buy Now
DISTI # FDS6898A
Avnet Americas Transistor MOSFET Array Dual N-CH 20V 9.4A 8-Pin SOIC T/R - Tape and Reel (Alt: FDS6898A) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.3859
  • 5,000 $0.4113
  • 10,000 $0.3767
  • 15,000 $0.3749
  • 20,000 $0.3722
$0.3722 / $0.4113 Buy Now
DISTI # 512-FDS6898A
Mouser Electronics MOSFETs SO-8 RoHS: Compliant 20417
  • 1 $1.4100
  • 10 $0.9380
  • 100 $0.6800
  • 500 $0.5430
  • 1,000 $0.4780
  • 2,500 $0.4180
  • 5,000 $0.4100
$0.4100 / $1.4100 Buy Now
Future Electronics Dual N-Channel 20 V 14 mOhm PowerTrench Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 6 Weeks Container: Reel 0
Reel
  • 2,500 $0.4050
  • 5,000 $0.4000
  • 10,000 $0.3950
$0.3950 / $0.4050 Buy Now
Future Electronics Dual N-Channel 20 V 14 mOhm PowerTrench Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks Container: Reel 0
Reel
  • 2,500 $0.4050
  • 5,000 $0.4000
  • 10,000 $0.3950
$0.3950 / $0.4050 Buy Now
Onlinecomponents.com Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 9.4A, 14mΩ RoHS: Compliant 0
  • 2,500 $0.4056
  • 5,000 $0.3996
  • 7,500 $0.3936
  • 10,000 $0.3877
  • 15,000 $0.3818
  • 25,000 $0.3761
$0.3761 / $0.4056 Buy Now
Bristol Electronics   1778
RFQ
DISTI # FDS6898A
TME Transistor: N-MOSFET x2, unipolar, 20V, 9.4A, 2W, SO8 Min Qty: 1 2292
  • 1 $0.8720
  • 5 $0.7900
  • 25 $0.6980
  • 100 $0.6460
  • 500 $0.5850
$0.5850 / $0.8720 Buy Now
DISTI # FDS6898A
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 2500 0
  • 2,500 $0.4000
$0.4000 Buy Now
Chip 1 Exchange INSTOCK 25018
RFQ
DISTI # FDS6898A
Avnet Asia Transistor MOSFET Array Dual N-CH 20V 9.4A 8-Pin SOIC T/R (Alt: FDS6898A) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days 2500
  • 2,500 $0.4614
  • 5,000 $0.4307
  • 7,500 $0.4195
  • 12,500 $0.4089
  • 25,000 $0.3988
  • 62,500 $0.3892
  • 125,000 $0.3800
$0.3800 / $0.4614 Buy Now
DISTI # FDS6898A
Avnet Silica Transistor MOSFET Array Dual NCH 20V 94A 8Pin SOIC TR (Alt: FDS6898A) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks, 0 Days Silica - 0
Buy Now
DISTI # FDS6898A
EBV Elektronik Transistor MOSFET Array Dual NCH 20V 94A 8Pin SOIC TR (Alt: FDS6898A) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 14 Weeks, 0 Days EBV - 5000
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 2500 5000
  • 2,500 $0.8129
  • 5,000 $0.7522
$0.7522 / $0.8129 Buy Now
Wuhan P&S Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET 20V,9.4A,14m�� Min Qty: 1 1745
  • 1 $1.1030
  • 100 $0.7040
  • 500 $0.5805
  • 1,000 $0.5337
$0.5337 / $1.1030 Buy Now

Part Details for FDS6898A

FDS6898A CAD Models

FDS6898A Part Data Attributes

FDS6898A onsemi
Buy Now Datasheet
Compare Parts:
FDS6898A onsemi Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 9.4A, 14mΩ, SOIC-8, 2500-REEL
Select a part to compare:
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code SOIC-8
Package Description SO-8
Manufacturer Package Code 751EB
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer onsemi
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 9.4 A
Drain-source On Resistance-Max 0.014 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 38 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDS6898A

This table gives cross-reference parts and alternative options found for FDS6898A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS6898A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FDS6898A Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 9.4A I(D), 20V, 0.014ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 FDS6898A vs FDS6898A

FDS6898A Related Parts

FDS6898A Frequently Asked Questions (FAQ)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Keep the thermal pad connected to the ground plane to improve heat dissipation.

  • Ensure the input voltage (VIN) is within the recommended range (4.5V to 18V). Use a stable voltage regulator and decoupling capacitors to minimize noise and ripple.

  • The SOA is limited by the maximum junction temperature (TJ) of 150°C. Ensure the device operates within the recommended current and voltage limits to prevent overheating.

  • Use ESD protection devices, such as TVS diodes or ESD arrays, on the input and output pins. Handle the device by the body or use an anti-static wrist strap to prevent ESD damage.

  • The device is optimized for switching frequencies between 100 kHz to 500 kHz. Operating outside this range may affect efficiency and performance.