Datasheets
FDS6894AZ_NL by: Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 8A I(D), 20V, 0.017ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

Part Details for FDS6894AZ_NL by Fairchild Semiconductor Corporation

Overview of FDS6894AZ_NL by Fairchild Semiconductor Corporation

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Part Details for FDS6894AZ_NL

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FDS6894AZ_NL Part Data Attributes

FDS6894AZ_NL Fairchild Semiconductor Corporation
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FDS6894AZ_NL Fairchild Semiconductor Corporation Power Field-Effect Transistor, 8A I(D), 20V, 0.017ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SOT
Package Description SMALL OUTLINE, R-PDSO-G8
Pin Count 8
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 0.017 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.9 W
Pulsed Drain Current-Max (IDM) 32 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

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