Part Details for FDS6680A_NL by Fairchild Semiconductor Corporation
Overview of FDS6680A_NL by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for FDS6680A_NL
| Part # | Distributor | Description | Stock | Price | Buy | |
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Velocity Electronics | Our Stock | 2970 |
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RFQ |
Part Details for FDS6680A_NL
FDS6680A_NL CAD Models
FDS6680A_NL Part Data Attributes
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FDS6680A_NL
Fairchild Semiconductor Corporation
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Datasheet
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FDS6680A_NL
Fairchild Semiconductor Corporation
Small Signal Field-Effect Transistor, 12.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | SOT | |
| Package Description | LEAD FREE, SO-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 12.5 A | |
| Drain-source On Resistance-Max | 0.0095 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 1 W | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDS6680A_NL
This table gives cross-reference parts and alternative options found for FDS6680A_NL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS6680A_NL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FDS6680AF011 | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 12.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | FDS6680A_NL vs FDS6680AF011 |
| SI4160DY-T1-GE3 | Vishay Intertechnologies | $0.9325 | Small Signal Field-Effect Transistor, 25.4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8 | FDS6680A_NL vs SI4160DY-T1-GE3 |
| FDS7796 | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 13A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | FDS6680A_NL vs FDS7796 |
| TPC8040-H | Toshiba America Electronic Components | Check for Price | TRANSISTOR 13000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, THIN, 2-6J1B, 8 PIN, FET General Purpose Small Signal | FDS6680A_NL vs TPC8040-H |
| FDS7760AF011 | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 15A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | FDS6680A_NL vs FDS7760AF011 |
| SI4354DY-T1-E3 | Vishay Siliconix | Check for Price | Small Signal Field-Effect Transistor, 9.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 | FDS6680A_NL vs SI4354DY-T1-E3 |
| FDS6680AD84Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 12.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | FDS6680A_NL vs FDS6680AD84Z |
| BSO072N03S | Infineon Technologies AG | Check for Price | Small Signal Field-Effect Transistor, 12A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, GREEN, PLASTIC PACKAGE-8 | FDS6680A_NL vs BSO072N03S |
| BSO064N03S | Infineon Technologies AG | Check for Price | Small Signal Field-Effect Transistor, 12A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, GREEN, PLASTIC PACKAGE-8 | FDS6680A_NL vs BSO064N03S |
| SI4406DY-T1-E3 | Vishay Siliconix | Check for Price | Small Signal Field-Effect Transistor, 13A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | FDS6680A_NL vs SI4406DY-T1-E3 |