Datasheets
FDS5690_NL by: Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8

Part Details for FDS5690_NL by Fairchild Semiconductor Corporation

Overview of FDS5690_NL by Fairchild Semiconductor Corporation

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Part Details for FDS5690_NL

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FDS5690_NL Part Data Attributes

FDS5690_NL Fairchild Semiconductor Corporation
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FDS5690_NL Fairchild Semiconductor Corporation Small Signal Field-Effect Transistor, 7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SOT
Package Description SMALL OUTLINE, R-PDSO-G8
Pin Count 8
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 7 A
Drain-source On Resistance-Max 0.028 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDS5690_NL

This table gives cross-reference parts and alternative options found for FDS5690_NL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS5690_NL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF7478QPBF Small Signal Field-Effect Transistor, 7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 International Rectifier FDS5690_NL vs IRF7478QPBF
IRF7478TRPBF-1 Small Signal Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET Infineon Technologies AG FDS5690_NL vs IRF7478TRPBF-1
FDS5690-SBBM008A Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation FDS5690_NL vs FDS5690-SBBM008A
IRF7478PBF Power Field-Effect Transistor, 7A I(D), 60V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 Infineon Technologies AG FDS5690_NL vs IRF7478PBF
FDS5690-F095 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation FDS5690_NL vs FDS5690-F095
IRF7478TRPBF Power Field-Effect Transistor, 7A I(D), 60V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, GREEN, SOP-8 Infineon Technologies AG FDS5690_NL vs IRF7478TRPBF
FDS5690F011 Small Signal Field-Effect Transistor, 7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation FDS5690_NL vs FDS5690F011
IRF7478PBF-1 Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Infineon Technologies AG FDS5690_NL vs IRF7478PBF-1
FDS5690-SBBI004A Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation FDS5690_NL vs FDS5690-SBBI004A
Part Number Description Manufacturer Compare
IRF7478QPBF Small Signal Field-Effect Transistor, 7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 International Rectifier FDS5690_NL vs IRF7478QPBF
FDS5690F011 Small Signal Field-Effect Transistor, 7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation FDS5690_NL vs FDS5690F011
IRF7478TRPBF Power Field-Effect Transistor, 7A I(D), 60V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, GREEN, SOP-8 Infineon Technologies AG FDS5690_NL vs IRF7478TRPBF
IRF7478PBF Power Field-Effect Transistor, 7A I(D), 60V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 Infineon Technologies AG FDS5690_NL vs IRF7478PBF
IRF7478TRPBF-1 Small Signal Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET Infineon Technologies AG FDS5690_NL vs IRF7478TRPBF-1

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