Part Details for FDS4465_F085 by Fairchild Semiconductor Corporation
Overview of FDS4465_F085 by Fairchild Semiconductor Corporation
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- Part Data Attributes: (Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| UPD78F0856MAA-FAA-G | Renesas Electronics Corporation | 8-bit Microcontrollers (Non Promotion), , / |
Part Details for FDS4465_F085
FDS4465_F085 CAD Models
FDS4465_F085 Part Data Attributes
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FDS4465_F085
Fairchild Semiconductor Corporation
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FDS4465_F085
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 13.5A I(D), 20V, 0.0085ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | SOIC | |
| Package Description | SMALL OUTLINE, R-PDSO-G8 | |
| Pin Count | 8 | |
| Manufacturer Package Code | 8LD, SOIC,JEDEC MS-012, .150" NARROW BODY | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 13.5 A | |
| Drain-source On Resistance-Max | 0.0085 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Pulsed Drain Current-Max (IDM) | 50 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |