Part Details for FDS3692 by Fairchild Semiconductor Corporation
Overview of FDS3692 by Fairchild Semiconductor Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FDS3692
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 4 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, SO | 101 |
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$1.0750 / $2.1500 | Buy Now |
Part Details for FDS3692
FDS3692 CAD Models
FDS3692 Part Data Attributes
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FDS3692
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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FDS3692
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 4.5A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | SOIC | |
Package Description | SO-8 | |
Pin Count | 8 | |
Manufacturer Package Code | 8LD, JEDEC MS-012, .150"NARROW BODY | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 171 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 4.5 A | |
Drain-source On Resistance-Max | 0.06 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 2.5 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FDS3692
This table gives cross-reference parts and alternative options found for FDS3692. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS3692, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRF7452 | Power Field-Effect Transistor, 4.5A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | Infineon Technologies AG | FDS3692 vs IRF7452 |
PHK4NQ10T,518 | PHK4NQ10T | NXP Semiconductors | FDS3692 vs PHK4NQ10T,518 |
FDS3682 | Power Field-Effect Transistor, 6A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | FDS3692 vs FDS3682 |
FDS3682 | 6A, 100V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET, SO-8 | Rochester Electronics LLC | FDS3692 vs FDS3682 |
IRF7452TRPBF | Power Field-Effect Transistor, 4.5A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | International Rectifier | FDS3692 vs IRF7452TRPBF |
IRF7452QPBF | Power Field-Effect Transistor, 4.5A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 | International Rectifier | FDS3692 vs IRF7452QPBF |
HUF75631SK8 | 5.5A, 100V, 0.039ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA | Rochester Electronics LLC | FDS3692 vs HUF75631SK8 |
IRF7452 | Power Field-Effect Transistor, 4.5A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | International Rectifier | FDS3692 vs IRF7452 |
HUF75631SK8T_NL | Power Field-Effect Transistor, 5.5A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, | Fairchild Semiconductor Corporation | FDS3692 vs HUF75631SK8T_NL |
IRF7452PBF | Power Field-Effect Transistor, 4.5A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | Infineon Technologies AG | FDS3692 vs IRF7452PBF |