Part Details for FDS3682 by Fairchild Semiconductor Corporation
Overview of FDS3682 by Fairchild Semiconductor Corporation
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for FDS3682
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 776 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, SO | 1932 |
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$1.5000 / $4.0000 | Buy Now |
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Rochester Electronics | 6A, 100V, 0.035ohm, N-Channel Power MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 194 |
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RFQ |
Part Details for FDS3682
FDS3682 CAD Models
FDS3682 Part Data Attributes
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FDS3682
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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FDS3682
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 6A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | SOT | |
| Package Description | SO-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 156 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 6 A | |
| Drain-source On Resistance-Max | 0.035 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 3 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDS3682
This table gives cross-reference parts and alternative options found for FDS3682. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS3682, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HUF75631SK8T_NL | Power Field-Effect Transistor, 5.5A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, | Fairchild Semiconductor Corporation | FDS3682 vs HUF75631SK8T_NL |
| IRF7452 | Power Field-Effect Transistor, 4.5A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | International Rectifier | FDS3682 vs IRF7452 |
| PHK5NQ10T/T3 | TRANSISTOR 5 A, 100 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | NXP Semiconductors | FDS3682 vs PHK5NQ10T/T3 |
| IRF7452PBF | Power Field-Effect Transistor, 4.5A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | International Rectifier | FDS3682 vs IRF7452PBF |
| FDS3692 | Power Field-Effect Transistor, 4.5A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | FDS3682 vs FDS3692 |
| HUF75631SK8T | 5.5A, 100V, 0.039ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA | Intersil Corporation | FDS3682 vs HUF75631SK8T |
| IRF7452 | Power Field-Effect Transistor, 4.5A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | Infineon Technologies AG | FDS3682 vs IRF7452 |
| HUF75631SK8T_NL | 5.5A, 100V, 0.039ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA | Rochester Electronics LLC | FDS3682 vs HUF75631SK8T_NL |
| IRF7452TRPBF | Power Field-Effect Transistor, 4.5A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, GREEN, SOP-8 | Infineon Technologies AG | FDS3682 vs IRF7452TRPBF |
| HUFA75631SK8 | Power Field-Effect Transistor, 5.5A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, | Fairchild Semiconductor Corporation | FDS3682 vs HUFA75631SK8 |