Part Details for FDS3572 by onsemi
Overview of FDS3572 by onsemi
- Distributor Offerings: (17 listings)
- Number of FFF Equivalents: (4 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Automotive
Price & Stock for FDS3572
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
31Y1390
|
Newark | Mosfet Transistor, N Channel, 8.9 A, 80 V, 0.014 Ohm, 10 V, 4 V Rohs Compliant: Yes |Onsemi FDS3572 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 910 |
|
$0.6260 | Buy Now |
|
DISTI #
09J6252
|
Newark | N Channel Mosfet, 80V, 8.9A, Soic, Transistor Polarity:N Channel, Drain Source Voltage Vds:80V, Continuous Drain Current Id:8.9A, On Resistance Rds(On):0.014Ohm, Transistor Mounting:Surface Mount, Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes |Onsemi FDS3572 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
$0.8080 | Buy Now |
|
DISTI #
29X6694
|
Newark | Mosfet, N Channel, 80V, 8.9A, Soic-8, Channel Type:N Channel, Drain Source Voltage Vds:80V, Continuous Drain Current Id:8.9A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Onsemi FDS3572 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.6820 / $0.9230 | Buy Now |
|
DISTI #
FDS3572CT-ND
|
DigiKey | MOSFET N-CH 80V 8.9A 8SOIC Min Qty: 1 Lead time: 18 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
4161 In Stock |
|
$0.6705 / $1.6000 | Buy Now |
|
DISTI #
FDS3572
|
Avnet Americas | Trans MOSFET N-CH 80V 8.9A 8-Pin SOIC N T/R - Tape and Reel (Alt: FDS3572) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 18 Weeks, 0 Days Container: Reel | 7500 |
|
$0.6651 / $0.7939 | Buy Now |
|
DISTI #
FDS3572
|
Avnet Americas | Trans MOSFET N-CH 80V 8.9A 8-Pin SOIC N T/R - Tape and Reel (Alt: FDS3572) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 18 Weeks, 0 Days Container: Reel | 700 Factory Stock |
|
$0.6651 / $0.7939 | Buy Now |
|
DISTI #
FDS3572
|
Avnet Americas | Trans MOSFET N-CH 80V 8.9A 8-Pin SOIC N T/R - Tape and Reel (Alt: FDS3572) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
|
RFQ | |
|
DISTI #
512-FDS3572
|
Mouser Electronics | MOSFET 80V N-Channel PowerTrench RoHS: Compliant | 3765 |
|
$0.7670 / $1.6000 | Buy Now |
|
|
Future Electronics | N-Channel 80 V 16 mOhm 2.5 W Surface Mount PowerTrench MosFet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
|
$0.6750 / $0.7000 | Buy Now |
|
|
Future Electronics | N-Channel 80 V 16 mOhm 2.5 W Surface Mount PowerTrench MosFet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
|
$0.6750 / $0.7000 | Buy Now |
Part Details for FDS3572
FDS3572 CAD Models
FDS3572 Part Data Attributes:
|
|
FDS3572
onsemi
Buy Now
Datasheet
|
Compare Parts:
FDS3572
onsemi
N-Channel PowerTrench® MOSFET 80V, 8.9A, 16mΩ, 2500-REEL
|
| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | SO-8 | |
| Manufacturer Package Code | 751EB | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 515 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 8.9 A | |
| Drain-source On Resistance-Max | 0.016 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDS3572
This table gives cross-reference parts and alternative options found for FDS3572. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS3572, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FDS3572_NL | 8.9A, 80V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, SO-8 | Rochester Electronics LLC | FDS3572 vs FDS3572_NL |
| FDS3572 | 8.9A, 80V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, SO-8 | Rochester Electronics LLC | FDS3572 vs FDS3572 |
| FDS3572 | Power Field-Effect Transistor, 8.9A I(D), 80V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | FDS3572 vs FDS3572 |
| FDS3572_NL | Power Field-Effect Transistor, 8.9A I(D), 80V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 | Fairchild Semiconductor Corporation | FDS3572 vs FDS3572_NL |