Part Details for FDPF7N60NZ by Fairchild Semiconductor Corporation
Overview of FDPF7N60NZ by Fairchild Semiconductor Corporation
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for FDPF7N60NZ
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 4 | 3000 |
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$0.3705 / $1.4250 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 6.5A I(D), 600V, 1.25OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB | 3596 |
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$0.4755 / $1.3587 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 6.5A I(D), 600V, 1.25OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB | 2400 |
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$0.4750 / $1.9000 | Buy Now |
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Rochester Electronics | FDPF7N60 - Power Field-Effect Transistor, 6.5A, 600V, 1.25ohm, N-Channel, MOSFET, TO-220AB RoHS: Compliant Status: Obsolete Min Qty: 1 | 70 |
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RFQ |
Part Details for FDPF7N60NZ
FDPF7N60NZ CAD Models
FDPF7N60NZ Part Data Attributes
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FDPF7N60NZ
Fairchild Semiconductor Corporation
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Datasheet
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FDPF7N60NZ
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 6.5A I(D), 600V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, SC-91A, TO-220F, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-220F | |
Package Description | ROHS COMPLIANT, SC-91A, TO-220F, 3 PIN | |
Pin Count | 3 | |
Manufacturer Package Code | TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 275 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 6.5 A | |
Drain-source On Resistance-Max | 1.25 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 33 W | |
Pulsed Drain Current-Max (IDM) | 26 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |