Part Details for FDPF5N50UT by onsemi
Overview of FDPF5N50UT by onsemi
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for FDPF5N50UT
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
FDPF5N50UT
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Avnet Americas | Trans MOSFET N-CH 500V 4A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube (Alt: FDPF5N50UT) RoHS: Compliant Min Qty: 1316 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tube | 7077 Partner Stock |
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$0.4247 | Buy Now |
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Flip Electronics | Stock, ship today | 7077 |
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RFQ |
Part Details for FDPF5N50UT
FDPF5N50UT CAD Models
FDPF5N50UT Part Data Attributes
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FDPF5N50UT
onsemi
Buy Now
Datasheet
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Compare Parts:
FDPF5N50UT
onsemi
Power MOSFET, N-Channel, UniFETTM, Ultra FRFETTM MOSFET 500 V, 4 A, 2 Ω, TO-220F, TO-220-3 FullPak, 1000-TUBE
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-220-3 FullPak | |
| Package Description | TO-220F, 3 PIN | |
| Manufacturer Package Code | 221AT | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 2 Days | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 216 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 4 A | |
| Drain-source On Resistance-Max | 2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 28 W | |
| Pulsed Drain Current-Max (IDM) | 16 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |