Part Details for FDP4N60NZ by Fairchild Semiconductor Corporation
Overview of FDP4N60NZ by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for FDP4N60NZ
FDP4N60NZ CAD Models
FDP4N60NZ Part Data Attributes
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FDP4N60NZ
Fairchild Semiconductor Corporation
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Datasheet
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FDP4N60NZ
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 3.8A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 223.8 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 3.8 A | |
| Drain-source On Resistance-Max | 2.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 89 W | |
| Pulsed Drain Current-Max (IDM) | 15 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDP4N60NZ
This table gives cross-reference parts and alternative options found for FDP4N60NZ. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDP4N60NZ, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| AP04N60H-HF | TRANSISTOR POWER, FET, FET General Purpose Power | Advanced Power Electronics Corp | FDP4N60NZ vs AP04N60H-HF |
| TSM4N60CPROG | Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3 | Taiwan Semiconductor | FDP4N60NZ vs TSM4N60CPROG |
| TSM4N60CPRO | Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 | Taiwan Semiconductor | FDP4N60NZ vs TSM4N60CPRO |
| TSM4N60CZC0 | Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | Taiwan Semiconductor | FDP4N60NZ vs TSM4N60CZC0 |
| 4N60L-TN3-R | Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3 | Unisonic Technologies Co Ltd | FDP4N60NZ vs 4N60L-TN3-R |
| SMK0460I | Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3 | Kodenshi Corporation | FDP4N60NZ vs SMK0460I |
| 4N60G-TQ3-T | Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE PACKAGE-3 | Unisonic Technologies Co Ltd | FDP4N60NZ vs 4N60G-TQ3-T |
| 4N60G-TN3-T | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Unisonic Technologies Co Ltd | FDP4N60NZ vs 4N60G-TN3-T |
| SSF4N60G | Power Field-Effect Transistor, 4A I(D), 600V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, ROHS COMPLIANT, IPAK-3 | Suzhou Good-Ark Electronics Co Ltd | FDP4N60NZ vs SSF4N60G |
| 4N60G-TN3-R | Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE PACKAGE-3 | Unisonic Technologies Co Ltd | FDP4N60NZ vs 4N60G-TN3-R |