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N-Channel PowerTrench® MOSFET 200V, 62A, 27mΩ, TO-220-3, 800-TUBE
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FDP2614 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
08N9301
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Newark | Mosfet, N Channel, 200V, 0.0229Ohm, 62A, To-220-3, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:62A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Power Dissipation:260W, Msl:- Rohs Compliant: Yes |Onsemi FDP2614 RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$2.4400 | Buy Now |
DISTI #
FDP2614FS-ND
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DigiKey | MOSFET N-CH 200V 62A TO220-3 Min Qty: 1 Lead time: 15 Weeks Container: Tube |
9354 In Stock |
|
$2.1757 / $5.5200 | Buy Now |
DISTI #
FDP2614
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Avnet Americas | Trans MOSFET N-CH 200V 62A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FDP2614) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 15 Weeks, 0 Days Container: Tube | 4000 Factory Stock |
|
$2.0478 / $2.1227 | Buy Now |
DISTI #
512-FDP2614
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Mouser Electronics | MOSFETs 200V N-Channel PowerTrench RoHS: Compliant | 2325 |
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$2.1700 / $3.2700 | Buy Now |
DISTI #
V36:1790_06359144
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Arrow Electronics | Trans MOSFET N-CH 200V 62A 3-Pin(3+Tab) TO-220 Tube Min Qty: 50 Package Multiple: 50 Lead time: 15 Weeks Date Code: 2331 | Americas - 60 |
|
$1.5018 / $2.0847 | Buy Now |
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Future Electronics | FDP2614 Series 200 V 62 A 27 mOhm N-Channel PowerTrench Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 15 Weeks Container: Tube |
0 Tube |
|
$2.0600 / $2.2200 | Buy Now |
|
Future Electronics | FDP2614 Series 200 V 62 A 27 mOhm N-Channel PowerTrench Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 6 Weeks Container: Tube |
0 Tube |
|
$2.0600 / $2.2200 | Buy Now |
|
Onlinecomponents.com | FDP2614 Series 200 V 62 A 27 mOhm N-Channel PowerTrench Mosfet - TO-220-3 RoHS: Compliant | 0 |
|
$2.1600 / $4.5300 | Buy Now |
DISTI #
70329515
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Verical | Trans MOSFET N-CH 200V 62A 3-Pin(3+Tab) TO-220 Tube Min Qty: 50 Package Multiple: 50 Date Code: 2331 | Americas - 50 |
|
$1.5018 / $1.7209 | Buy Now |
DISTI #
FDP2614
|
TME | Transistor: N-MOSFET, unipolar, 200V, 39.3A, 260W, TO220-3 Min Qty: 1 | 72 |
|
$2.9800 / $4.6200 | Buy Now |
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FDP2614
onsemi
Buy Now
Datasheet
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Compare Parts:
FDP2614
onsemi
N-Channel PowerTrench® MOSFET 200V, 62A, 27mΩ, TO-220-3, 800-TUBE
Select a part to compare: |
Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | TO-220-3 | |
Package Description | TO-220, 3 PIN | |
Manufacturer Package Code | 340AT | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 15 Weeks | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 145 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 62 A | |
Drain-source On Resistance-Max | 0.027 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 260 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |