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Power MOSFET, N-Channel, UniFETTM, 500 V, 18 A, 265 mΩ, TO-220, 1000-TUBE
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
61M6289
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Newark | Mosfet N-Channel 18A 500V To220, Channel Type:N Channel, Drain Source Voltage Vds:500V, Continuous Drain Current Id:18A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V, Msl:- Rohs Compliant: Yes |Onsemi FDP18N50 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 18756 |
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$1.5400 / $2.8100 | Buy Now |
DISTI #
FDP18N50-ND
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DigiKey | MOSFET N-CH 500V 18A TO220-3 Min Qty: 1 Lead time: 25 Weeks Container: Tube |
444 In Stock |
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$1.2630 / $2.7000 | Buy Now |
DISTI #
FDP18N50
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Avnet Americas | Trans MOSFET N-CH 500V 18A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FDP18N50) RoHS: Compliant Min Qty: 50 Package Multiple: 1 Lead time: 25 Weeks, 0 Days Container: Tube | 0 |
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$1.3539 / $1.5156 | Buy Now |
DISTI #
FDP18N50
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Avnet Americas | Trans MOSFET N-CH 500V 18A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FDP18N50) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Tube | 0 |
|
$1.3539 / $1.5156 | Buy Now |
DISTI #
512-FDP18N50
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Mouser Electronics | MOSFET 500V N-Channel PowerTrench MOSFET RoHS: Compliant | 9642 |
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$1.2600 / $2.7000 | Buy Now |
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Future Electronics | N-Channel 500 V 265 mOhm Flange Mount Mosfet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
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$1.2800 / $1.3200 | Buy Now |
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Future Electronics | N-Channel 500 V 265 mOhm Flange Mount Mosfet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
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$1.2800 / $1.3200 | Buy Now |
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Rochester Electronics | Power MOSFET, N-Channel, UniFETTM, 500V, 18A RoHS: Compliant Status: Active Min Qty: 1 | 26 |
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$1.2500 / $1.4700 | Buy Now |
DISTI #
FDP18N50
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TME | Transistor: N-MOSFET, unipolar, 500V, 10.8A, 235W, TO220AB Min Qty: 1 | 54 |
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$1.7000 / $2.7300 | Buy Now |
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Ameya Holding Limited | Min Qty: 15 | 965 |
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$3.1808 / $3.2787 | Buy Now |
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FDP18N50
onsemi
Buy Now
Datasheet
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Compare Parts:
FDP18N50
onsemi
Power MOSFET, N-Channel, UniFETTM, 500 V, 18 A, 265 mΩ, TO-220, 1000-TUBE
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Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Package Description | TO-220, 3 PIN | |
Manufacturer Package Code | 340AT | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 43 Weeks | |
Samacsys Manufacturer | onsemi | |
Additional Feature | FAST SWITCHING | |
Avalanche Energy Rating (Eas) | 945 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 18 A | |
Drain-source On Resistance-Max | 0.265 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 235 W | |
Pulsed Drain Current-Max (IDM) | 72 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for FDP18N50. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDP18N50, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF610B_FP001 | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TO-220, 3 PIN | Fairchild Semiconductor Corporation | FDP18N50 vs IRF610B_FP001 |
FDP18N50 | Power Field-Effect Transistor, 18A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN | Fairchild Semiconductor Corporation | FDP18N50 vs FDP18N50 |
PHD3055L | 12A, 60V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC PACKAGE-3 | NXP Semiconductors | FDP18N50 vs PHD3055L |
STH8NA60 | 8A, 600V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 | STMicroelectronics | FDP18N50 vs STH8NA60 |
STD3NA50T4 | 2.7A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 | STMicroelectronics | FDP18N50 vs STD3NA50T4 |
IPP45N06S4L-08 | Power Field-Effect Transistor, 45A I(D), 60V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | FDP18N50 vs IPP45N06S4L-08 |
934057024118 | 75A, 30V, 0.0152ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3 | NXP Semiconductors | FDP18N50 vs 934057024118 |
IRF620B | Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | FDP18N50 vs IRF620B |
SPP80N06S2L-06 | Power Field-Effect Transistor, 80A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | FDP18N50 vs SPP80N06S2L-06 |
STP75NF75 | N channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in TO-220 package | STMicroelectronics | FDP18N50 vs STP75NF75 |