Datasheets
FDP032N08B_F102 by:
onsemi
Fairchild Semiconductor Corporation
onsemi
Not Found

N-Channel PowerTrench® MOSFET 80V, 211A, 3.3mΩ, TO-220 3L, 6400-RAIL

Part Details for FDP032N08B_F102 by onsemi

Results Overview of FDP032N08B_F102 by onsemi

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Applications Consumer Electronics Industrial Automation Energy and Power Systems Electronic Manufacturing Renewable Energy

FDP032N08B_F102 Information

FDP032N08B_F102 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Available Datasheets

Part # Manufacturer Description Datasheet
0603AF-102XJEW Coilcraft Inc General Purpose Inductor, 5%, 1 Element, Ferrite-Core, SMD, 0603, CHIP, 0603, HALOGEN FREE AND ROHS COMPLIANT
0603AF-102XJR Coilcraft Inc Not recommended for new designs. Change 'R' to 'E' for
0603AF-102XJE Coilcraft Inc RF inductor, ferrite core, 5% tol, SMT, RoHS, halogen-free

Price & Stock for FDP032N08B_F102

Part # Distributor Description Stock Price Buy
DISTI # FDP032N08B-F102
Avnet Americas Trans MOSFET N-CH 80V 120A 3-Pin TO-220 Rail - Rail/Tube (Alt: FDP032N08B-F102) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 15 Weeks, 0 Days Container: Tube 0
  • 800 $1.2919
  • 1,600 $1.2764
  • 3,200 $1.2612
  • 4,800 $1.2552
  • 6,400 $1.2464
$1.2464 / $1.2919 Buy Now
DISTI # FDP032N08B-F102
Avnet Silica Trans MOSFET N-CH 80V 120A 3-Pin TO-220 Rail (Alt: FDP032N08B-F102) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 16 Weeks, 0 Days Silica - 0
Buy Now
DISTI # FDP032N08B-F102
EBV Elektronik Trans MOSFET N-CH 80V 120A 3-Pin TO-220 Rail (Alt: FDP032N08B-F102) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 16 Weeks, 0 Days EBV - 0
Buy Now

Part Details for FDP032N08B_F102

FDP032N08B_F102 CAD Models

FDP032N08B_F102 Part Data Attributes

FDP032N08B_F102 onsemi
Buy Now Datasheet
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FDP032N08B_F102 onsemi N-Channel PowerTrench® MOSFET 80V, 211A, 3.3mΩ, TO-220 3L, 6400-RAIL
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Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ON SEMICONDUCTOR
Package Description FLANGE MOUNT, R-PSFM-T3
Manufacturer Package Code TO220T03
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 15 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 649 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 120 A
Drain-source On Resistance-Max 0.0033 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 263 W
Pulsed Drain Current-Max (IDM) 844 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

FDP032N08B_F102 Related Parts

FDP032N08B_F102 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for FDP032N08B_F102 is -55°C to 150°C, as specified in the datasheet. However, it's recommended to operate within -40°C to 125°C for optimal performance and reliability.

  • To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) that is at least 10V, and ensure the gate drive voltage is sufficient to overcome the threshold voltage (Vth). A gate resistor (Rg) can also be used to slow down the turn-on time and reduce ringing.

  • For optimal performance, it's recommended to use a low-inductance PCB layout with short, wide traces for the drain, source, and gate connections. Keep the gate trace away from the drain and source traces to minimize coupling. Use a solid ground plane and decoupling capacitors to reduce noise and ringing.

  • Yes, the FDP032N08B_F102 is suitable for high-frequency switching applications up to 1 MHz. However, it's essential to consider the MOSFET's switching characteristics, such as rise and fall times, and ensure the gate drive is capable of delivering the required current. Additionally, consider the PCB layout and decoupling to minimize ringing and noise.

  • To protect the MOSFET from overvoltage and overcurrent, use a voltage clamp or a zener diode to limit the voltage across the MOSFET. Implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC. Ensure the MOSFET is operated within its safe operating area (SOA) to prevent damage.