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N-Channel PowerTrench® MOSFET 80V, 211A, 3.3mΩ, TO-220 3L, 6400-RAIL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FDP032N08B_F102 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
0603AF-102XJEW | Coilcraft Inc | General Purpose Inductor, 5%, 1 Element, Ferrite-Core, SMD, 0603, CHIP, 0603, HALOGEN FREE AND ROHS COMPLIANT | |
0603AF-102XJR | Coilcraft Inc | Not recommended for new designs. Change 'R' to 'E' for | |
0603AF-102XJE | Coilcraft Inc | RF inductor, ferrite core, 5% tol, SMT, RoHS, halogen-free |
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
FDP032N08B-F102
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Avnet Americas | Trans MOSFET N-CH 80V 120A 3-Pin TO-220 Rail - Rail/Tube (Alt: FDP032N08B-F102) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 15 Weeks, 0 Days Container: Tube | 0 |
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$1.2464 / $1.2919 | Buy Now |
DISTI #
FDP032N08B-F102
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Avnet Silica | Trans MOSFET N-CH 80V 120A 3-Pin TO-220 Rail (Alt: FDP032N08B-F102) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 16 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
DISTI #
FDP032N08B-F102
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EBV Elektronik | Trans MOSFET N-CH 80V 120A 3-Pin TO-220 Rail (Alt: FDP032N08B-F102) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 16 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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FDP032N08B_F102
onsemi
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Datasheet
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FDP032N08B_F102
onsemi
N-Channel PowerTrench® MOSFET 80V, 211A, 3.3mΩ, TO-220 3L, 6400-RAIL
Select a part to compare: |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ON SEMICONDUCTOR | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Manufacturer Package Code | TO220T03 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 15 Weeks | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 649 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 80 V | |
Drain Current-Max (ID) | 120 A | |
Drain-source On Resistance-Max | 0.0033 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 263 W | |
Pulsed Drain Current-Max (IDM) | 844 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |