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Part Details for FDN360P by onsemi
Overview of FDN360P by onsemi
- Distributor Offerings: (26 listings)
- Number of FFF Equivalents: (6 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Price & Stock for FDN360P
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
25M9464
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Newark | Mosfet Transistor, P Channel, 2 A, 30 V, 80 Mohm, -10 V, -1.9 V Rohs Compliant: Yes |Onsemi FDN360P Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 188530 |
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$0.1550 / $0.5300 | Buy Now |
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DISTI #
58K1466
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Newark | P Channel Mosfet, -30V, 2A, Super Sot-3, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:2A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:20V Rohs Compliant: Yes |Onsemi FDN360P Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 2888 |
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$0.1340 / $0.1590 | Buy Now |
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DISTI #
87X5244
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Newark | Mosfet Transistor, P Channel, 2 A, -30 V, 80 Mohm, -10 V, 20 V Rohs Compliant: Yes |Onsemi FDN360P Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.1220 / $0.1320 | Buy Now |
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DISTI #
25AC9557
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Newark | 30V P-Fet 80 Mo Ssot3 Rohs Compliant: Yes |Onsemi FDN360P Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.1220 / $0.1400 | Buy Now |
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DISTI #
67R2064
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Newark | Transistor, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:2A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:20V, Power Dissipation:500Mw Rohs Compliant: Yes |Onsemi FDN360P Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.1480 | Buy Now |
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DISTI #
FDN360PCT-ND
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DigiKey | MOSFET P-CH 30V 2A SUPERSOT3 Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
52578 In Stock |
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$0.1100 / $0.5100 | Buy Now |
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DISTI #
FDN360P
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Avnet Americas | Power MOSFET, P Channel, 30 V, 2 A, 80 Milliohms, SOT-23, 3 Pins, Surface Mount - Tape and Reel (Alt: FDN360P) RoHS: Compliant Min Qty: 863 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 865 Partner Stock |
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$0.7192 / $0.8584 | Buy Now |
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DISTI #
58K1466
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Avnet Americas | Power MOSFET, P Channel, 30 V, 2 A, 80 Milliohms, SOT-23, 3 Pins, Surface Mount - Product that comes on tape, but is not reeled (Alt: 58K1466) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 39 Weeks, 4 Days Container: Ammo Pack | 3710 Partner Stock |
|
$0.2020 / $0.5300 | Buy Now |
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DISTI #
512-FDN360P
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Mouser Electronics | MOSFET SSOT-3 P-CH -30V RoHS: Compliant | 149781 |
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$0.1100 / $0.5100 | Buy Now |
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Future Electronics | Single P-Channel 30 V 80 mOhm PowerTrench Mosfet - SSOT-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 57000Reel |
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$0.1080 / $0.1170 | Buy Now |
Part Details for FDN360P
FDN360P CAD Models
FDN360P Part Data Attributes:
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FDN360P
onsemi
Buy Now
Datasheet
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Compare Parts:
FDN360P
onsemi
PowerTrench MOSFET, Single P-Channel, 3000-REEL
|
| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | SUPERSOT-3 | |
| Manufacturer Package Code | 527AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 77 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 2 A | |
| Drain-source On Resistance-Max | 0.08 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.5 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDN360P
This table gives cross-reference parts and alternative options found for FDN360P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDN360P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSS308PEL6327HTSA1 | Small Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | FDN360P vs BSS308PEL6327HTSA1 |
| BSS308PEH6327XTSA1 | Small Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | FDN360P vs BSS308PEH6327XTSA1 |
| BSS308PEL6327 | Small Signal Field-Effect Transistor, 2.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | FDN360P vs BSS308PEL6327 |
| FDN360PD87Z | Small Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 | Fairchild Semiconductor Corporation | FDN360P vs FDN360PD87Z |
| BSS308PEH6327 | Small Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | FDN360P vs BSS308PEH6327 |
| FDN360P_NL | Small Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 | Fairchild Semiconductor Corporation | FDN360P vs FDN360P_NL |