Part Details for FDMT800100DC by onsemi
Overview of FDMT800100DC by onsemi
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for FDMT800100DC
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
49Y8342
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Newark | Fet 100V 2.95 Mohm/Reel Rohs Compliant: Yes |Onsemi FDMT800100DC Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$4.0100 | Buy Now |
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DISTI #
57AC1882
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Newark | Mosfet, N-Ch, 100V, 162A, 150Deg C, 156W, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:162A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.8V Rohs Compliant: Yes |Onsemi FDMT800100DC Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$4.7600 / $8.3900 | Buy Now |
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DISTI #
FDMT800100DCCT-ND
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DigiKey | MOSFET N-CH 100V 24A/162A 8DUAL Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
4763 In Stock |
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$4.3010 / $8.0900 | Buy Now |
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DISTI #
FDMT800100DC
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Avnet Americas | Trans MOSFET N-CH 100V 24A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMT800100DC) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
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$4.1742 / $4.9821 | Buy Now |
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DISTI #
512-FDMT800100DC
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Mouser Electronics | MOSFET N-Channel Dual Cool 88 PowerTrench MOSFET 100 V, 162 A, 2.95 mO RoHS: Compliant | 2900 |
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$4.2800 / $6.7700 | Buy Now |
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Future Electronics | FDMT800100DC: 100 V 162 A 2.95 mOhm N-Channel Dual CoolTM 88 PowerTrench Mosfet RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$4.2000 | Buy Now |
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Rochester Electronics | N-Channel Dual Cool, PowerTrench MOSFET 100V, 162A RoHS: Compliant Status: Active Min Qty: 1 | 1635 |
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$4.1700 / $4.9100 | Buy Now |
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DISTI #
FDMT800100DC
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TME | Transistor: N-MOSFET, unipolar, 100V, 102A, Idm: 989A, 156W, DFNW8 Min Qty: 1 | 0 |
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$5.8800 / $8.8200 | RFQ |
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DISTI #
FDMT800100DC
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Avnet Silica | Trans MOSFET N-CH 100V 24A 8-Pin PQFN T/R (Alt: FDMT800100DC) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 21 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
FDMT800100DC
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EBV Elektronik | Trans MOSFET N-CH 100V 24A 8-Pin PQFN T/R (Alt: FDMT800100DC) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 22 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for FDMT800100DC
FDMT800100DC CAD Models
FDMT800100DC Part Data Attributes:
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FDMT800100DC
onsemi
Buy Now
Datasheet
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Compare Parts:
FDMT800100DC
onsemi
N-Channel Dual Cool™ 88 PowerTrench® MOSFET 100V, 162A, 2.95mΩ, 3000-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Manufacturer Package Code | 507AR | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 35 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 1536 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 162 A | |
| Drain-source On Resistance-Max | 0.00295 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 75 pF | |
| JESD-30 Code | S-PDSO-N3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 156 W | |
| Pulsed Drain Current-Max (IDM) | 989 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 84 ns | |
| Turn-on Time-Max (ton) | 80 ns |