Datasheets
FDMS86255ET150 by:

N-Channel Shielded Gate PowerTrench® MOSFET 150V, 63A, 12.4mΩ, 3000-REEL

Part Details for FDMS86255ET150 by onsemi

Overview of FDMS86255ET150 by onsemi

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for FDMS86255ET150

Part # Distributor Description Stock Price Buy
DISTI # 54AH8643
Newark Mosfet, N-Ch, 150V, 63A, 175Deg C, 136W Rohs Compliant: Yes |Onsemi FDMS86255ET150 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 3701
  • 1 $4.1100
$4.1100 Buy Now
DISTI # 45Y5129
Newark Fet 150V 12.4 Mohm Pqfn56/Reel Rohs Compliant: Yes |Onsemi FDMS86255ET150 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 3,000 $3.3800
  • 6,000 $3.1600
  • 12,000 $2.9300
  • 18,000 $2.8200
  • 30,000 $2.7700
$2.7700 / $3.3800 Buy Now
DISTI # FDMS86255ET150CT-ND
DigiKey MOSFET N-CH 150V 10A/63A POWER56 Min Qty: 1 Lead time: 20 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 684
In Stock
  • 1 $6.0300
  • 10 $5.0610
  • 100 $4.0940
  • 500 $3.6391
  • 1,000 $3.1160
  • 3,000 $2.9340
$2.9340 / $6.0300 Buy Now
DISTI # FDMS86255ET150
Avnet Americas Trans MOSFET N-CH 150V 10A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMS86255ET150) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 3,000 $3.3328
  • 6,000 $3.2427
  • 12,000 $3.1527
  • 18,000 $3.0626
  • 24,000 $2.9725
  • 30,000 $2.8824
  • 300,000 $2.7924
$2.7924 / $3.3328 Buy Now
DISTI # 512-FDMS86255ET150
Mouser Electronics MOSFET N-Channel Shielded Gate PowerTrench MOSFET RoHS: Compliant 999
  • 1 $5.9200
  • 10 $5.0200
  • 25 $4.8600
  • 100 $4.0300
  • 250 $3.9300
  • 500 $3.6000
  • 1,000 $3.1100
  • 3,000 $2.9300
$2.9300 / $5.9200 Buy Now
DISTI # V72:2272_06338199
Arrow Electronics Trans MOSFET N-CH 150V 10A 8-Pin Power QFN EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks Date Code: 2334 Container: Cut Strips Americas - 2000
  • 1 $5.6780
  • 10 $4.9240
  • 25 $4.7230
  • 100 $3.8890
  • 250 $3.7550
  • 500 $3.4820
  • 1,000 $3.0230
$3.0230 / $5.6780 Buy Now
Future Electronics MOSFET N-CH 150V POWER56 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks Container: Reel 0
Reel
  • 3,000 $2.8800
$2.8800 Buy Now
DISTI # 69894480
Verical Trans MOSFET N-CH 150V 10A 8-Pin Power QFN EP T/R Min Qty: 2 Package Multiple: 1 Date Code: 2334 Americas - 2000
  • 2 $5.6780
  • 10 $4.9240
  • 25 $4.7230
  • 100 $3.8890
  • 250 $3.7550
  • 500 $3.4820
  • 1,000 $3.0230
$3.0230 / $5.6780 Buy Now
Rochester Electronics FDMS86255 - N-Channel Shielded Gate PowerTrench MOSFET 150V, 63A RoHS: Compliant Status: Active Min Qty: 1 2112
  • 1 $3.2800
  • 25 $3.2200
  • 100 $3.0900
  • 500 $2.9600
  • 1,000 $2.7900
$2.7900 / $3.2800 Buy Now
DISTI # FDMS86255ET150
TME Transistor: N-MOSFET, unipolar, 150V, 44A, Idm: 276A, 136W, Power56 Min Qty: 1 0
  • 1 $5.6000
  • 5 $5.0400
  • 25 $4.4600
  • 100 $4.0000
  • 500 $3.7300
$3.7300 / $5.6000 RFQ
DISTI # FDMS86255ET150
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 3000 0
  • 3,000 $2.8100
$2.8100 Buy Now
DISTI # FDMS86255ET150
Avnet Silica Trans MOSFET N-CH 150V 10A 8-Pin PQFN T/R (Alt: FDMS86255ET150) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 21 Weeks, 0 Days Silica - 0
Buy Now
DISTI # FDMS86255ET150
EBV Elektronik Trans MOSFET N-CH 150V 10A 8-Pin PQFN T/R (Alt: FDMS86255ET150) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 22 Weeks, 0 Days EBV - 0
Buy Now

Part Details for FDMS86255ET150

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FDMS86255ET150 Part Data Attributes

FDMS86255ET150 onsemi
Buy Now Datasheet
Compare Parts:
FDMS86255ET150 onsemi N-Channel Shielded Gate PowerTrench® MOSFET 150V, 63A, 12.4mΩ, 3000-REEL
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Manufacturer Package Code 483AG
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 41 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 541 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 10 A
Drain-source On Resistance-Max 0.0124 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MO-240AA
JESD-30 Code R-PDSO-N5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 276 A
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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