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Part Details for FDMS86180 by onsemi
Overview of FDMS86180 by onsemi
- Distributor Offerings: (16 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Computing and Data Storage
Aerospace and Defense
Price & Stock for FDMS86180
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
18AC7314
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Newark | Mosfet, N-Ch, 100V, 151A, Power 56, Transistor Polarity:N Channel, Continuous Drain Current Id:151A, Drain Source Voltage Vds:100V, On Resistance Rds(On):0.0024Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3.2V, Power Rohs Compliant: Yes |Onsemi FDMS86180 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 3802 |
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$2.8400 / $5.4800 | Buy Now |
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DISTI #
24AC8554
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Newark | Fet 100V 3.2 Mohm Pqfn56/Reel Rohs Compliant: Yes |Onsemi FDMS86180 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$2.4300 / $2.9600 | Buy Now |
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DISTI #
FDMS86180CT-ND
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DigiKey | MOSFET N-CH 100V 151A POWER56 Min Qty: 1 Lead time: 24 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2900 In Stock |
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$2.5667 / $5.2700 | Buy Now |
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DISTI #
FDMS86180
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Avnet Americas | Transistor MOSFET N-CH 100V 151A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS86180) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 24 Weeks, 0 Days Container: Reel | 600021800 Factory Stock |
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$2.6398 / $2.9550 | Buy Now |
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DISTI #
FDMS86180
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Avnet Americas | Transistor MOSFET N-CH 100V 151A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS86180) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 24 Weeks, 0 Days Container: Reel | 21800 Factory Stock |
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$2.6398 / $2.9550 | Buy Now |
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DISTI #
512-FDMS86180
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Mouser Electronics | MOSFET 100V/20V N-Channel PTNG MOSFET RoHS: Compliant | 4409 |
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$2.5600 / $5.2700 | Buy Now |
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Future Electronics | N-Channel 100 V 3.2 mOhmShielded Gate PowerTrench Mosfet - Power56 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$2.5100 | Buy Now |
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Rochester Electronics | FDMS86180 - N-Channel Shielded Gate PowerTrench MOSFET 100V, 151A RoHS: Compliant Status: Active Min Qty: 1 | 21800 |
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$2.4400 / $2.8700 | Buy Now |
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Chip 1 Exchange | INSTOCK | 3731 |
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RFQ | |
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DISTI #
FDMS86180
|
Avnet Asia | Transistor MOSFET N-CH 100V 151A 8-Pin Power 56 T/R (Alt: FDMS86180) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 24 Weeks, 0 Days | 0 |
|
$2.3176 / $2.5921 | Buy Now |
Part Details for FDMS86180
FDMS86180 CAD Models
FDMS86180 Part Data Attributes:
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FDMS86180
onsemi
Buy Now
Datasheet
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Compare Parts:
FDMS86180
onsemi
N-Channel Shielded Gate PowerTrench® MOSFET 100V, 151A, 3.2mΩ, 3000-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Manufacturer Package Code | 483AF | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 55 Weeks | |
| Date Of Intro | 2017-02-03 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 486 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 151 A | |
| Drain-source On Resistance-Max | 0.0032 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 55 pF | |
| JEDEC-95 Code | MO-240AA | |
| JESD-30 Code | R-PDSO-N5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 138 W | |
| Pulsed Drain Current-Max (IDM) | 775 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 62 ns | |
| Turn-on Time-Max (ton) | 61 ns |