Part Details for FDMS86150 by Fairchild Semiconductor Corporation
Overview of FDMS86150 by Fairchild Semiconductor Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Renewable Energy
Price & Stock for FDMS86150
Part # | Distributor | Description | Stock | Price | Buy | |
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NexGen Digital | 1 |
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RFQ | ||
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Chip1Cloud | MOSFET N CH 100V 16A POWER56 | 1500 |
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RFQ |
Part Details for FDMS86150
FDMS86150 CAD Models
FDMS86150 Part Data Attributes
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FDMS86150
Fairchild Semiconductor Corporation
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Datasheet
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FDMS86150
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 16A I(D), 100V, 0.00485ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA, ROHS COMPLIANT, POWER 56, 8 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | QFN | |
Package Description | ROHS COMPLIANT, POWER 56, 8 PIN | |
Pin Count | 8 | |
Manufacturer Package Code | 8LD, PQFN, POWERCLIP SINGLE, JEDEC, MO-240, VARIATION AA, 5.0X6.0 MM | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 726 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 16 A | |
Drain-source On Resistance-Max | 0.00485 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MO-240AA | |
JESD-30 Code | R-PDSO-N5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 156 W | |
Pulsed Drain Current-Max (IDM) | 300 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |