FDMS5362L_F085
Description: 60V, 17.6A, 26mΩ, Power 56 N-Channel UltraFET®, PQFN 5x6 8L (Power 56), 6000-TAPE REEL

Overview of FDMS5362L_F085 by onsemi

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  • Distributor Offerings: ( 1 listing )
  • Number of FFF Equivalents: ( 0 crosses )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 crosses )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Energy and Power Systems Renewable Energy

Available Datasheets

Part # Manufacturer Description Datasheet
UPD78F0856MAA-FAA-G Renesas Electronics Corporation 8-bit Microcontrollers (Non Promotion), , /

Price & Stock for FDMS5362L_F085 by onsemi

Part # Manufacturer Description Stock Price Buy
DISTI # FDMS5362LF085
Avnet Americas Trans MOSFET N-CH 60V 17.6A 8-Pin PQFN T/R - Bulk (Alt: FDMS5362LF085) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Bulk 526 Partner Stock
RFQ

CAD Models for FDMS5362L_F085 by onsemi
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Part Data Attributes for FDMS5362L_F085 by onsemi

FDMS5362L_F085
onsemi
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
ON SEMICONDUCTOR
Package Description
SMALL OUTLINE, R-PDSO-F5
Manufacturer Package Code
PQFN08M
Reach Compliance Code
compliant
ECCN Code
EAR99
Factory Lead Time
4 Weeks
Samacsys Manufacturer
onsemi
Avalanche Energy Rating (Eas)
32 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
Drain Current-Max (ID)
17.6 A
Drain-source On Resistance-Max
0.042 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-F5
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
5
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
41.7 W
Reference Standard
AEC-Q101
Surface Mount
YES
Terminal Finish
Matte Tin (Sn) - annealed
Terminal Form
FLAT
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. FDMS5362L_F085
    onsemi
    60V, 17.6A, 26mΩ, Power 56 N-Channel UltraFET®, PQFN 5x6 8L (Power 56), 6000-TAPE REEL
    VS

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