Datasheets
FDMS3604S by:

Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V, PQFN-8, 3000-REEL

Part Details for FDMS3604S by onsemi

Overview of FDMS3604S by onsemi

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Applications Industrial Automation Energy and Power Systems Transportation and Logistics Renewable Energy Automotive Motor control systems

Price & Stock for FDMS3604S

Part # Distributor Description Stock Price Buy
DISTI # 68X0376
Newark Dual N-Ch. Er Trench Mo/Reel Rohs Compliant: Yes |Onsemi FDMS3604S RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 3,000 $0.7190
  • 6,000 $0.6540
  • 12,000 $0.5890
  • 18,000 $0.5670
  • 30,000 $0.5540
$0.5540 / $0.7190 Buy Now
DISTI # FDMS3604SCT-ND
DigiKey MOSFET 2N-CH 30V 13A/23A POWER56 Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 1464
In Stock
  • 1 $1.6100
  • 10 $1.0880
  • 100 $0.7671
  • 500 $0.6241
  • 1,000 $0.5774
  • 3,000 $0.5447
$0.5447 / $1.6100 Buy Now
DISTI # FDMS3604S
Avnet Americas Transistor MOSFET Array Dual N-CH 30V 60A/130A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMS3604S) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.5315
  • 6,000 $0.5251
  • 12,000 $0.5188
  • 18,000 $0.5163
  • 24,000 $0.5127
$0.5127 / $0.5315 Buy Now
DISTI # 512-FDMS3604S
Mouser Electronics MOSFETs PowerTrench Power Stage RoHS: Compliant 579
  • 1 $1.6100
  • 10 $1.0900
  • 100 $0.7680
  • 500 $0.6250
  • 1,000 $0.5780
  • 3,000 $0.5440
$0.5440 / $1.6100 Buy Now
Onlinecomponents.com Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V RoHS: Compliant 0
  • 750 $1.1330
  • 1,500 $0.6970
  • 2,250 $0.5520
  • 3,000 $0.5410
$0.5410 / $1.1330 Buy Now
Rochester Electronics Power Field-Effect Transistor, 13A, 30V, 0.0068ohm, 2-Element, N-Channel, MOSFET RoHS: Compliant Status: Active Min Qty: 1 1831
  • 1 $0.6053
  • 25 $0.5932
  • 100 $0.5690
  • 500 $0.5448
  • 1,000 $0.5145
$0.5145 / $0.6053 Buy Now
DISTI # FDMS3604S
TME Transistor: N-MOSFET x2, unipolar, 30/30V, 30/40A, Idm: 40÷100A Min Qty: 1 0
  • 1 $1.0410
  • 5 $0.8560
  • 25 $0.7560
  • 100 $0.6790
  • 500 $0.6110
$0.6110 / $1.0410 RFQ
DISTI # FDMS3604S
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 3000 0
  • 3,000 $0.5400
$0.5400 Buy Now
DISTI # FDMS3604S
Avnet Asia Transistor MOSFET Array Dual N-CH 30V 60A/130A 8-Pin PQFN T/R (Alt: FDMS3604S) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days 0
  • 3,000 $0.5734
  • 6,000 $0.5660
  • 9,000 $0.5587
  • 15,000 $0.5516
  • 30,000 $0.5380
  • 75,000 $0.5251
  • 150,000 $0.5127
$0.5127 / $0.5734 Buy Now
DISTI # FDMS3604S
Avnet Silica Transistor MOSFET Array Dual N-CH 30V 60A/130A 8-Pin PQFN T/R (Alt: FDMS3604S) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days Silica - 0
Buy Now
DISTI # FDMS3604S
EBV Elektronik Transistor MOSFET Array Dual N-CH 30V 60A/130A 8-Pin PQFN T/R (Alt: FDMS3604S) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 18 Weeks, 0 Days EBV - 0
Buy Now

Part Details for FDMS3604S

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FDMS3604S Part Data Attributes

FDMS3604S onsemi
Buy Now Datasheet
Compare Parts:
FDMS3604S onsemi Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V, PQFN-8, 3000-REEL
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code PQFN-8
Package Description QFN-8
Manufacturer Package Code 483AJ
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 40 mJ
Case Connection DRAIN SOURCE
Configuration SERIES, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 13 A
Drain-source On Resistance-Max 0.0068 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-N6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Pulsed Drain Current-Max (IDM) 40 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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