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Transistors / Power Field-Effect Transistors / FDMS0312S
Datasheets
FDMS0312S by:

N-Channel PowerTrench® SyncFET™ 30V, 42A, 4.9mΩ, 3000-REEL

Part Details for FDMS0312S by onsemi

Overview of FDMS0312S by onsemi

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Applications Industrial Automation Motor control systems

Price & Stock for FDMS0312S

Part # Distributor Description Stock Price Buy
DISTI # 92R5546
Newark Mosfet, N Ch, 30V, 42A, Power 56, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:42A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.9V Rohs Compliant: Yes |Onsemi FDMS0312S Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 3,000 $0.2840
  • 6,000 $0.2630
  • 12,000 $0.2460
  • 18,000 $0.2290
  • 30,000 $0.2190
$0.2190 / $0.2840 Buy Now
DISTI # 94T2669
Newark Mosfet, N Ch, 30V, 42A, Power 56, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:42A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.9V Rohs Compliant: Yes |Onsemi FDMS0312S Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 1,000 $0.2740
$0.2740 Buy Now
DISTI # FDMS0312SCT-ND
DigiKey MOSFET N-CH 30V 19A/42A 8PQFN Min Qty: 1 Lead time: 16 Weeks Container: Tape & Reel (TR), Cut Tape (CT), Digi-Reel® 3000
In Stock
  • 1 $0.6400
  • 10 $0.5550
  • 100 $0.3843
  • 500 $0.3211
  • 1,000 $0.2733
  • 3,000 $0.2434
  • 6,000 $0.2306
  • 9,000 $0.2135
  • 30,000 $0.2114
$0.2114 / $0.6400 Buy Now
DISTI # FDMS0312S
Avnet Americas Trans MOSFET N-CH 30V 19A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS0312S) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.2503
  • 6,000 $0.2435
  • 12,000 $0.2367
  • 18,000 $0.2300
  • 24,000 $0.2232
  • 30,000 $0.2165
  • 300,000 $0.2097
$0.2097 / $0.2503 Buy Now
DISTI # 512-FDMS0312S
Mouser Electronics MOSFET 30V N-Chan SyncFET PowerTrench 8300
  • 1 $0.6600
  • 10 $0.5670
  • 100 $0.3920
  • 500 $0.3280
  • 1,000 $0.2790
  • 3,000 $0.2490
  • 6,000 $0.2360
  • 9,000 $0.2220
  • 24,000 $0.2110
$0.2110 / $0.6600 Buy Now
Future Electronics N-Channel 30 V 4.9 mΩ Surface Mount PowerTrench Mosfet - Power 56 RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.2250
  • 6,000 $0.2200
  • 9,000 $0.2150
$0.2150 / $0.2250 Buy Now
Future Electronics N-Channel 30 V 4.9 mΩ Surface Mount PowerTrench Mosfet - Power 56 RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.2250
  • 6,000 $0.2200
  • 9,000 $0.2150
$0.2150 / $0.2250 Buy Now
DISTI # FDMS0312S
TME Transistor: N-MOSFET, unipolar, 30V, 42A, Idm: 90A, 46W, Power56 Min Qty: 1 0
  • 1 $0.6170
  • 100 $0.3720
  • 500 $0.3000
  • 1,000 $0.2700
$0.2700 / $0.6170 RFQ
DISTI # FDMS0312S
Avnet Asia Trans MOSFET N-CH 30V 19A 8-Pin Power 56 T/R (Alt: FDMS0312S) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days 0
  • 6,000 $0.2225
  • 12,000 $0.2196
  • 18,000 $0.2168
  • 30,000 $0.2140
  • 60,000 $0.2088
  • 150,000 $0.2037
  • 300,000 $0.1989
$0.1989 / $0.2225 Buy Now
DISTI # FDMS0312S
Avnet Silica Trans MOSFET N-CH 30V 19A 8-Pin Power 56 T/R (Alt: FDMS0312S) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days Silica - 0
Buy Now
DISTI # FDMS0312S
EBV Elektronik Trans MOSFET N-CH 30V 19A 8-Pin Power 56 T/R (Alt: FDMS0312S) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 18 Weeks, 0 Days EBV - 0
Buy Now

Part Details for FDMS0312S

FDMS0312S CAD Models

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FDMS0312S Part Data Attributes:

Parametric Data
FDMS0312S onsemi
Buy Now Datasheet
Compare Parts:
FDMS0312S onsemi N-Channel PowerTrench® SyncFET™ 30V, 42A, 4.9mΩ, 3000-REEL
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Package Description ROHS COMPLIANT, POWER 56, 8 PIN
Manufacturer Package Code 483AE
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 60 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 19 A
Drain-source On Resistance-Max 0.0044 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MO-240AA
JESD-30 Code R-PDSO-F5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 46 W
Pulsed Drain Current-Max (IDM) 90 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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