Part Details for FDMJ1032C by Fairchild Semiconductor Corporation
Overview of FDMJ1032C by Fairchild Semiconductor Corporation
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Applications
Space Technology
Aerospace and Defense
Part Details for FDMJ1032C
FDMJ1032C CAD Models
FDMJ1032C Part Data Attributes
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FDMJ1032C
Fairchild Semiconductor Corporation
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FDMJ1032C
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 3.2A I(D), 20V, 0.132ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SC-75, MICROFET-6
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | SC-75 | |
Package Description | ROHS COMPLIANT, SC-75, MICROFET-6 | |
Pin Count | 6 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | DRAIN | |
Configuration | COMPLEX | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 3.2 A | |
Drain-source On Resistance-Max | 0.132 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-N6 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
Power Dissipation-Max (Abs) | 1.4 W | |
Pulsed Drain Current-Max (IDM) | 12 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |