Part Details for FDME1034CZT by Fairchild Semiconductor Corporation
Overview of FDME1034CZT by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for FDME1034CZT
| Part # | Distributor | Description | Stock | Price | Buy | |
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Chip1Cloud | MOSFET N/P-CH 20V 6-MICROFET | 3560 |
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RFQ |
Part Details for FDME1034CZT
FDME1034CZT CAD Models
FDME1034CZT Part Data Attributes:
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FDME1034CZT
Fairchild Semiconductor Corporation
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Datasheet
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FDME1034CZT
Fairchild Semiconductor Corporation
Small Signal Field-Effect Transistor, 3.8A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, 1.60 X 1.60 MM, HALOGEN FREE AND ROHS COMPLIANT, THIN, MICROFET-6
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | UMLP | |
| Package Description | 1.60 X 1.60 MM, HALOGEN FREE AND ROHS COMPLIANT, THIN, MICROFET-6 | |
| Pin Count | 6 | |
| Manufacturer Package Code | 6LD,UMLP, DUAL, NON-JEDEC, 1.6MM SQ, DUAL DAP, 0.55MM MAX | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | ESD PROTECTION | |
| Case Connection | DRAIN | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 3.8 A | |
| Drain-source On Resistance-Max | 0.066 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 40 pF | |
| JESD-30 Code | S-PDSO-N6 | |
| JESD-609 Code | e4 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.3 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | NICKEL PALLADIUM GOLD | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |