Datasheets
FDMC8884 by:

30V N-Channel Power Trench® MOSFET, 3000-REEL

Part Details for FDMC8884 by onsemi

Overview of FDMC8884 by onsemi

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

Price & Stock for FDMC8884

Part # Distributor Description Stock Price Buy
DISTI # 73AK1004
Newark Mosfet, N Ch, 30V, 15A, Mlp 3.3X3.3 |Onsemi FDMC8884 Min Qty: 1110 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1,000 $0.3770
  • 2,500 $0.3060
  • 10,000 $0.2960
$0.2960 / $0.3770 Buy Now
DISTI # 07P9167
Newark 30V N-Channel Power Trench Mosfet/Tape Reel |Onsemi FDMC8884 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
Buy Now
Rochester Electronics 9A, 30V, 0.019ohm, N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 24916
  • 1 $0.3299
  • 25 $0.3233
  • 100 $0.3101
  • 500 $0.2969
  • 1,000 $0.2804
$0.2804 / $0.3299 Buy Now

Part Details for FDMC8884

FDMC8884 CAD Models

FDMC8884 Part Data Attributes

FDMC8884 onsemi
Buy Now Datasheet
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FDMC8884 onsemi 30V N-Channel Power Trench® MOSFET, 3000-REEL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Package Description MO-229, 8 PIN
Manufacturer Package Code 511DQ
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 24 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 9 A
Drain-source On Resistance-Max 0.019 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-N5
JESD-609 Code e4
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 18 W
Pulsed Drain Current-Max (IDM) 40 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish NICKEL PALLADIUM GOLD
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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