-
Part Symbol
-
Footprint
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
N-Channel Shielded Gate PowerTrench® MOSFET 60V , 84A, 4.3mΩ, 3000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
46AC0787
|
Newark | Mosfet, N-Ch, 60V, 84A, Power 33-8, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:84A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.8V Rohs Compliant: Yes |Onsemi FDMC86570L Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 14 |
|
$1.8400 | Buy Now |
DISTI #
08X5810
|
Newark | Fet 60V 4.3 Mohm Pqfn33/Reel Rohs Compliant: Yes |Onsemi FDMC86570L Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$1.2600 / $1.6000 | Buy Now |
DISTI #
FDMC86570LCT-ND
|
DigiKey | MOSFET N-CH 60V 18A/56A POWER33 Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
4375 In Stock |
|
$1.2601 / $2.7000 | Buy Now |
DISTI #
FDMC86570L
|
Avnet Americas | Trans MOSFET N-CH 60V 18A 8-Pin Power 33 T/R - Tape and Reel (Alt: FDMC86570L) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel | 44988 Factory Stock |
|
$1.2500 / $1.4920 | Buy Now |
DISTI #
512-FDMC86570L
|
Mouser Electronics | MOSFET 60V N Chan Shielded Gate Power Trench RoHS: Compliant | 100 |
|
$1.2900 / $2.7000 | Buy Now |
|
Future Electronics | N-Channel 60 V 87 A 4.3 mΩ Surface Mount PowerTrench Mosfet - Power33 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
|
$1.2900 | Buy Now |
|
Future Electronics | N-Channel 60 V 87 A 4.3 mΩ Surface Mount PowerTrench Mosfet - Power33 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Cut Tape/Mini-Reel | 0Cut Tape/Mini-Reel |
|
$1.2900 / $1.5500 | Buy Now |
|
Quest Components | POWER FIELD-EFFECT TRANSISTOR, 18A I(D), 60V, 0.0043OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, MO-240BA | 1905 |
|
$0.9844 / $2.3438 | Buy Now |
|
Quest Components | POWER FIELD-EFFECT TRANSISTOR, 18A I(D), 60V, 0.0043OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, MO-240BA | 2400 |
|
$3.6180 / $7.2360 | Buy Now |
|
Rochester Electronics | FDMC86570L - N-Channel Shielded Gate PowerTrench MOSFET 60V , 84A RoHS: Compliant Status: Active Min Qty: 1 | 14996 |
|
$1.2500 / $1.4700 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
FDMC86570L
onsemi
Buy Now
Datasheet
|
Compare Parts:
FDMC86570L
onsemi
N-Channel Shielded Gate PowerTrench® MOSFET 60V , 84A, 4.3mΩ, 3000-REEL
|
Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Package Description | ROHS COMPLIANT, POWER 33, 8 PIN | |
Manufacturer Package Code | 483AW | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 57 Weeks | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 253 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 18 A | |
Drain-source On Resistance-Max | 0.0043 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MO-240BA | |
JESD-30 Code | S-PDSO-N5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 54 W | |
Pulsed Drain Current-Max (IDM) | 200 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |