Part Details for FDMC5614P by Fairchild Semiconductor Corporation
Overview of FDMC5614P by Fairchild Semiconductor Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Renewable Energy
Automotive
Price & Stock for FDMC5614P
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 1111 |
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RFQ | ||
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Win Source Electronics | MOSFET P-CH 60V 5.7A POWER33 | 154283 |
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$1.2250 / $1.8370 | Buy Now |
Part Details for FDMC5614P
FDMC5614P CAD Models
FDMC5614P Part Data Attributes:
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FDMC5614P
Fairchild Semiconductor Corporation
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Datasheet
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FDMC5614P
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 5.7A I(D), 60V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 3.30 X 3.30 MM, ROHS COMPLIANT, MLP-8
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | MLP | |
Package Description | 3.30 X 3.30 MM, ROHS COMPLIANT, MLP-8 | |
Pin Count | 8 | |
Manufacturer Package Code | 8LD,MLP,DUAL, 3.3MM SQUARE | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 5.7 A | |
Drain-source On Resistance-Max | 0.1 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | S-PDSO-F5 | |
JESD-609 Code | e4 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 6 W | |
Pulsed Drain Current-Max (IDM) | 23 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | NICKEL PALLADIUM GOLD | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |