Part Details for FDMC3612 by Fairchild Semiconductor Corporation
Overview of FDMC3612 by Fairchild Semiconductor Corporation
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Medical Imaging
Automotive
Robotics and Drones
Price & Stock for FDMC3612
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 5 | 2181 |
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$0.2925 / $1.1250 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 3.3A I(D), 100V, 0.11OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, MO-240BA | 1744 |
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$0.3900 / $1.5000 | Buy Now |
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DISTI #
SMC-FDMC3612
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Sensible Micro Corporation | Mosfet 100V Powertrench Mosfet RoHS: Not Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days | 14300 |
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$0.2515 / $0.2725 | RFQ |
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Win Source Electronics | MOSFET N-CH 100V 8-MLP | 166700 |
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$0.5660 / $0.8480 | Buy Now |
Part Details for FDMC3612
FDMC3612 CAD Models
FDMC3612 Part Data Attributes
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FDMC3612
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
FDMC3612
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 3.3A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA, 3.30 X 3.30 MM, ROHS COMPLIANT, POWER 33, MLP, 8 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | MLP | |
| Package Description | 3.30 X 3.30 MM, ROHS COMPLIANT, POWER 33, MLP, 8 PIN | |
| Pin Count | 8 | |
| Manufacturer Package Code | 8LD, MLP, PUNCHED, DUAL, JEDEC MO-240, VARIATION BA, 3.3MM SQUARE | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 32 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 3.3 A | |
| Drain-source On Resistance-Max | 0.11 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MO-240BA | |
| JESD-30 Code | S-PDSO-N5 | |
| JESD-609 Code | e4 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 35 W | |
| Pulsed Drain Current-Max (IDM) | 15 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | NICKEL PALLADIUM GOLD | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |