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FDM6296 by:

30V Single N-Channel, Logic-Level, PowerTrench® MOSFET, 8LD,MLP,NON JEDEC VERSION, MICROFET,3.3MM SQUARE, 3000/TAPE REEL

Part Details for FDM6296 by Fairchild Semiconductor Corporation

Overview of FDM6296 by Fairchild Semiconductor Corporation

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Applications Computing and Data Storage Energy and Power Systems Transportation and Logistics Renewable Energy Electronic Manufacturing Automotive

Price & Stock for FDM6296

Part # Distributor Description Stock Price Buy
Quest Components POWER FIELD-EFFECT TRANSISTOR, 11.5A I(D), 30V, 0.0105OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 3000
  • 1 $2.4938
  • 482 $1.1471
  • 873 $1.0474
$1.0474 / $2.4938 Buy Now
Rochester Electronics FDM6296 - Single N-Channel Logic-Level PowerTrench MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 10611
  • 1 $1.5700
  • 25 $1.5400
  • 100 $1.4800
  • 500 $1.4100
  • 1,000 $1.3300
$1.3300 / $1.5700 Buy Now

Part Details for FDM6296

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FDM6296 Part Data Attributes

FDM6296 Fairchild Semiconductor Corporation
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FDM6296 Fairchild Semiconductor Corporation 30V Single N-Channel, Logic-Level, PowerTrench® MOSFET, 8LD,MLP,NON JEDEC VERSION, MICROFET,3.3MM SQUARE, 3000/TAPE REEL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code MLP
Package Description SMALL OUTLINE, S-PDSO-F5
Pin Count 8
Manufacturer Package Code 8LD,MLP,NON JEDEC VERSION, MICROFET,3.3MM SQUARE
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 11.5 A
Drain-source On Resistance-Max 0.0105 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-F5
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Pulsed Drain Current-Max (IDM) 40 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

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