Datasheets
FDI040N06 by:
Fairchild Semiconductor Corporation
Fairchild Semiconductor Corporation
onsemi
Not Found

Power Field-Effect Transistor, 120A I(D), 60V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3

Part Details for FDI040N06 by Fairchild Semiconductor Corporation

Results Overview of FDI040N06 by Fairchild Semiconductor Corporation

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Energy and Power Systems Medical Imaging Robotics and Drones

FDI040N06 Information

FDI040N06 by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FDI040N06

Part # Distributor Description Stock Price Buy
Rochester Electronics 120A, 60V, 0.004ohm, N-Channel Power MOSFET, TO-262AA RoHS: Compliant Status: Obsolete Min Qty: 1 252
  • 1 $1.7900
  • 25 $1.7500
  • 100 $1.6800
  • 500 $1.6100
  • 1,000 $1.5200
$1.5200 / $1.7900 Buy Now

Part Details for FDI040N06

FDI040N06 CAD Models

There are no models available for this part yet.

Sign in to request this CAD model.

Register or Sign In

FDI040N06 Part Data Attributes

FDI040N06 Fairchild Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
FDI040N06 Fairchild Semiconductor Corporation Power Field-Effect Transistor, 120A I(D), 60V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3
Select a part to compare:
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-262
Package Description ROHS COMPLIANT, TO-262, I2PAK-3
Pin Count 3
Manufacturer Package Code 3LD, TO262, JEDEC VARIATION AA (I2PAK)
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 872 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 120 A
Drain-source On Resistance-Max 0.004 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 231 W
Pulsed Drain Current-Max (IDM) 672 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDI040N06

This table gives cross-reference parts and alternative options found for FDI040N06. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDI040N06, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
LTP120N06 Lite-On Semiconductor Corporation Check for Price Power Field-Effect Transistor, 120A I(D), 60V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 FDI040N06 vs LTP120N06

FDI040N06 Related Parts

FDI040N06 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the FDI040N06 is -55°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance and reliability.

  • To ensure proper biasing, make sure to provide a stable voltage supply within the recommended range (Vgs = 0 to 10V, Vds = 0 to 60V), and maintain a sufficient gate-source voltage (Vgs) to achieve the desired on-state resistance (Rds(on)).

  • For optimal thermal management, use a PCB with a thermal pad and ensure good thermal conductivity. Keep the component away from heat sources, and use a heat sink if necessary. Follow Fairchild's recommended PCB layout guidelines for the TO-220 package.

  • While the FDI040N06 is suitable for high-frequency switching, its performance may degrade above 100 kHz. For frequencies above 100 kHz, consider using a more specialized high-frequency MOSFET or evaluating the device's performance in your specific application.

  • Handle the FDI040N06 with ESD-safe materials and tools, and follow proper ESD protection procedures during assembly and testing. Use ESD protection devices, such as TVS diodes or ESD suppressors, in your circuit design to prevent ESD damage.