Transistors
FDI040N06
Description: Power Field-Effect Transistor, 120A I(D), 60V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3

Overview of FDI040N06 by Fairchild Semiconductor Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 1 listing )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 1 option )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Energy and Power Systems Medical Imaging Robotics and Drones

Price & Stock for FDI040N06 by Fairchild Semiconductor Corporation

Part # Manufacturer Description Stock Price Buy
Rochester Electronics 120A, 60V, 0.004ohm, N-Channel Power MOSFET, TO-262AA ' RoHS: Compliant Status: Obsolete Min Qty: 1 252
  • 1 $1.8800
  • 25 $1.8400
  • 100 $1.7600
  • 500 $1.6900
  • 1,000 $1.6000
$1.6000 / $1.8800 Buy Now

CAD Models for FDI040N06 by Fairchild Semiconductor Corporation
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Part Data Attributes for FDI040N06 by Fairchild Semiconductor Corporation

FDI040N06
Fairchild Semiconductor Corporation
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
Part Package Code
TO-262
Package Description
ROHS COMPLIANT, TO-262, I2PAK-3
Pin Count
3
Manufacturer Package Code
3LD, TO262, JEDEC VARIATION AA (I2PAK)
Reach Compliance Code
not_compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Avalanche Energy Rating (Eas)
872 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
Drain Current-Max (ID)
120 A
Drain-source On Resistance-Max
0.004 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-262AA
JESD-30 Code
R-PSIP-T3
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
IN-LINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
231 W
Pulsed Drain Current-Max (IDM)
672 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
MATTE TIN
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. FDI040N06
    Fairchild Semiconductor Corporation
    Power Field-Effect Transistor, 120A I(D), 60V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3
    VS

Alternate Parts for FDI040N06

This table gives cross-reference parts and alternative options found for FDI040N06. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDI040N06, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
AP99T06AGP-HF TRANSISTOR 120 A, 60 V, 0.0042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220, 3 PIN, FET General Purpose Power Advanced Power Electronics Corp FDI040N06 vs AP99T06AGP-HF

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