Part Details for FDI030N06 by onsemi
Overview of FDI030N06 by onsemi
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FDI030N06
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
64R3006
|
Newark | Fet 60V 3.2 Mohm To220 Rohs Compliant: Yes |Onsemi FDI030N06 RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
Buy Now | |
|
DISTI #
FDI030N06
|
Avnet Americas | Trans MOSFET N-CH 60V 193A 3-Pin(3+Tab) TO-262 T/R - Rail/Tube (Alt: FDI030N06) RoHS: Compliant Min Qty: 257 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tube | 18000 Partner Stock |
|
$2.2941 / $2.3790 | Buy Now |
|
|
Rochester Electronics | Power Field-Effect Transistor, 120A, 60V, 0.0032ohm, N-Channel, MOSFET, TO-262AA RoHS: Compliant Status: Obsolete Min Qty: 1 | 670 |
|
$2.1100 / $2.4800 | Buy Now |
|
|
Flip Electronics | Stock, ship today | 18000 |
|
RFQ |
Part Details for FDI030N06
FDI030N06 CAD Models
FDI030N06 Part Data Attributes
|
|
FDI030N06
onsemi
Buy Now
Datasheet
|
Compare Parts:
FDI030N06
onsemi
N-Channel PowerTrench® MOSFET 60V, 193A, 3.2mΩ, I2PAK-3 / D2PAK-3 STRAIGHT LEAD, 1000-TUBE
|
| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | I2PAK-3 / D2PAK-3 STRAIGHT LEAD | |
| Package Description | TO-262, I2PAK-3 | |
| Manufacturer Package Code | 418AV | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 2 Days | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 1434 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 120 A | |
| Drain-source On Resistance-Max | 0.0032 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-262AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 231 W | |
| Pulsed Drain Current-Max (IDM) | 772 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |