Datasheets
FDG6332C-F085P by: onsemi

20V N & P Channel PowerTrench® MOSFETs, SC70 6L, 3000-REEL, Automotive Qualified

Part Details for FDG6332C-F085P by onsemi

Results Overview of FDG6332C-F085P by onsemi

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FDG6332C-F085P Information

FDG6332C-F085P by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FDG6332C-F085P

Part # Distributor Description Stock Price Buy
DISTI # FDG6332C-F085P
EBV Elektronik Trans MOSFET Array NCHPCH 20V 0706A 6Pin SC70 TR (Alt: FDG6332C-F085P) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 143 Weeks, 0 Days EBV - 0
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Vyrian Transistors 2630
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Part Details for FDG6332C-F085P

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FDG6332C-F085P Part Data Attributes

FDG6332C-F085P onsemi
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FDG6332C-F085P onsemi 20V N & P Channel PowerTrench® MOSFETs, SC70 6L, 3000-REEL, Automotive Qualified
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Part Package Code SC70 6L
Package Description SC-70, 6 PIN
Manufacturer Package Code 419AD
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 0.7 A
Drain-source On Resistance-Max 0.3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (Abs) 0.3 W
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

FDG6332C-F085P Frequently Asked Questions (FAQ)

  • A good PCB layout for optimal thermal performance involves placing thermal vias under the device, using a solid ground plane, and keeping the thermal path as short as possible. It's also recommended to use a thermal pad on the bottom of the device and to connect it to a thermal plane or a heat sink.

  • To ensure proper biasing, follow the recommended biasing circuit in the datasheet, and make sure the voltage supply is stable and within the recommended range. Also, ensure that the input signals are within the specified voltage range and that the device is operated within the recommended temperature range.

  • Critical parameters to monitor during device operation include the drain-source voltage (Vds), gate-source voltage (Vgs), drain current (Id), and junction temperature (Tj). Monitoring these parameters can help prevent device damage and ensure optimal performance.

  • To protect the device from ESD, handle the device by the body or use an ESD wrist strap, and ensure that the workspace is ESD-safe. Also, use ESD protection devices such as TVS diodes or ESD protection arrays on the PCB, and follow proper PCB design guidelines for ESD protection.

  • The recommended soldering conditions for the FDG6332C-F085P include a peak temperature of 260°C, a soldering time of 10-30 seconds, and a soldering method that follows the IPC J-STD-020 standard.