Part Details for FDG6322C by onsemi
Overview of FDG6322C by onsemi
- Distributor Offerings: (20 listings)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for FDG6322C
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
41AC9922
|
Newark | Mosfet, N & P Ch, 25V, 0.22A, Sc-70-6, Transistor Polarity:N And P Channel, Continuous Drain Current Id:220Ma, Drain Source Voltage Vds:25V, On Resistance Rds(On):2.6Ohm, Rds(On) Test Voltage Vgs:4.5V, Threshold Voltage Vgs:850Mv, Rohs Compliant: Yes |Onsemi FDG6322C Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 1165 |
|
$0.1740 / $0.4370 | Buy Now |
DISTI #
67R2050
|
Newark | Mosfet, Full Reel, Channel Type:Complementary N And P Channel, Drain Source Voltage Vds N Channel:25V, Drain Source Voltage Vds P Channel:25V, Continuous Drain Current Id N Channel:220Ma, Continuous Drain Current Id P Channel:220Ma Rohs Compliant: Yes |Onsemi FDG6322C Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.1400 / $0.1510 | Buy Now |
DISTI #
58K1454
|
Newark | Dual N/P Channel Mosfet, 25V, Sc-70, Transistor Polarity:Complementary N And P Channel, Drain Source Voltage Vds:25V, Continuous Drain Current Id:220Ma, On Resistance Rds(On):2.6Ohm, Transistor Mounting:Surface Mount, Product Range:-Rohs Compliant: Yes |Onsemi FDG6322C Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
$0.1880 | Buy Now |
DISTI #
25AC9538
|
Newark | 25V 1/2 Br N/P 4/1.1 O Rohs Compliant: Yes |Onsemi FDG6322C Min Qty: 2442 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.1400 / $0.1540 | Buy Now |
DISTI #
FDG6322CCT-ND
|
DigiKey | MOSFET N/P-CH 25V 0.22A SC88 Min Qty: 1 Lead time: 16 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
28087 In Stock |
|
$0.1253 / $0.4400 | Buy Now |
DISTI #
FDG6322C
|
Avnet Americas | Trans MOSFET N/P-CH 25V 0.22A/0.41A 6-Pin SC-70 T/R - Tape and Reel (Alt: FDG6322C) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 12000 |
|
$0.1242 / $0.1483 | Buy Now |
DISTI #
512-FDG6322C
|
Mouser Electronics | MOSFET SC70-6 COMP N-P-CH RoHS: Compliant | 49512 |
|
$0.1250 / $0.3900 | Buy Now |
DISTI #
E02:0323_00034005
|
Arrow Electronics | Trans MOSFET N/P-CH 25V 0.22A/0.41A 6-Pin SC-88 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks Date Code: 2402 | Europe - 9000 |
|
$0.1275 / $0.1438 | Buy Now |
DISTI #
V72:2272_06300692
|
Arrow Electronics | Trans MOSFET N/P-CH 25V 0.22A/0.41A 6-Pin SC-88 T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks Date Code: 2226 Container: Cut Strips | Americas - 23 |
|
$0.1285 / $0.2202 | Buy Now |
|
Future Electronics | Dual N & P Channel 25 V 4 Ohm Digital FET SC70-6 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks Container: Reel | 30000Reel |
|
$0.1260 / $0.1350 | Buy Now |
Part Details for FDG6322C
FDG6322C CAD Models
FDG6322C Part Data Attributes
|
FDG6322C
onsemi
Buy Now
Datasheet
|
Compare Parts:
FDG6322C
onsemi
Dual N & P Channel Digital FET 25V, 3000-REEL
|
Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Manufacturer Package Code | 419B-02 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 37 Weeks | |
Samacsys Manufacturer | onsemi | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 25 V | |
Drain Current-Max (ID) | 0.22 A | |
Drain-source On Resistance-Max | 4 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
Power Dissipation-Max (Abs) | 300 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FDG6322C
This table gives cross-reference parts and alternative options found for FDG6322C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDG6322C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
FDG6322C | Small Signal Field-Effect Transistor, 0.22A I(D), 25V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN | Fairchild Semiconductor Corporation | FDG6322C vs FDG6322C |