Part Details for FDG6322C by Fairchild Semiconductor Corporation
Overview of FDG6322C by Fairchild Semiconductor Corporation
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FDG6322C
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
|
Bristol Electronics | 3000 |
|
RFQ | ||
|
Quest Components | MOSFET Transistor, Pair, Complementary, TSOP | 2400 |
|
$0.3000 / $0.7500 | Buy Now |
DISTI #
FDG6322C
|
Maritex | Transistor: N+P-MOSFET, unipolar, 25V/-25V, 0.22A/-0.41A, 4/1.1ohm, 0.3W, -55+150 deg.C, SMD, SC70-6 Min Qty: 1 Package Multiple: 1 | 413 |
|
$0.4340 / $0.5550 | Buy Now |
|
Win Source Electronics | MOSFET N/P-CH 25V SC70-6 | 207825 |
|
$1.1650 / $1.7470 | Buy Now |
Part Details for FDG6322C
FDG6322C CAD Models
FDG6322C Part Data Attributes
|
FDG6322C
Fairchild Semiconductor Corporation
Buy Now
Datasheet
|
Compare Parts:
FDG6322C
Fairchild Semiconductor Corporation
Small Signal Field-Effect Transistor, 0.22A I(D), 25V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | SC-70 | |
Package Description | SC-70, 6 PIN | |
Pin Count | 6 | |
Manufacturer Package Code | 6LD,SC70,EIAJ SC-88,1.25MM WIDE | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.21.00.95 | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 25 V | |
Drain Current-Max (ID) | 0.22 A | |
Drain-source On Resistance-Max | 4 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
Power Dissipation-Max (Abs) | 300 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FDG6322C
This table gives cross-reference parts and alternative options found for FDG6322C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDG6322C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
FDG6322C | Dual N & P Channel Digital FET 25V, 3000-REEL | onsemi | FDG6322C vs FDG6322C |