Datasheets
FDG329N by:

Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN

Part Details for FDG329N by Fairchild Semiconductor Corporation

Overview of FDG329N by Fairchild Semiconductor Corporation

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for FDG329N

Part # Distributor Description Stock Price Buy
Bristol Electronics   Min Qty: 7 2430
  • 7 $0.7500
  • 21 $0.3750
  • 135 $0.2250
  • 668 $0.1500
  • 2,335 $0.1125
$0.1125 / $0.7500 Buy Now
Bristol Electronics   10809
RFQ
Bristol Electronics   5200
RFQ
Quest Components   1944
  • 1 $1.0000
  • 21 $0.3000
  • 168 $0.2000
$0.2000 / $1.0000 Buy Now
Quest Components   8647
  • 1 $0.6000
  • 3,334 $0.2100
  • 7,144 $0.1800
$0.1800 / $0.6000 Buy Now
Quest Components   4160
  • 1 $5.0100
  • 325 $2.7555
  • 727 $2.5050
$2.5050 / $5.0100 Buy Now
Rochester Electronics Small Signal Field-Effect Transistor, 1.5A, 20V, N-Channel MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 383935
  • 1 $0.1820
  • 25 $0.1784
  • 100 $0.1711
  • 500 $0.1638
  • 1,000 $0.1547
$0.1547 / $0.1820 Buy Now
Chip1Cloud MOSFET N-CH 20V 1.5A SC70-6 2650
RFQ

Part Details for FDG329N

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FDG329N Part Data Attributes

FDG329N Fairchild Semiconductor Corporation
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FDG329N Fairchild Semiconductor Corporation Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SC-70
Package Description SC-70, 6 PIN
Pin Count 6
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 1.5 A
Drain-source On Resistance-Max 0.09 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.38 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDG329N

This table gives cross-reference parts and alternative options found for FDG329N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDG329N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDG329N_NL Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN Fairchild Semiconductor Corporation FDG329N vs FDG329N_NL
FDG329N 1500mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-70, 6 PIN Rochester Electronics LLC FDG329N vs FDG329N
Part Number Description Manufacturer Compare
FDG329N_NL Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN Fairchild Semiconductor Corporation FDG329N vs FDG329N_NL
SI1400DL-T1-E3 Small Signal Field-Effect Transistor, 1.6A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SC-70, 6 PIN Vishay Intertechnologies FDG329N vs SI1400DL-T1-E3
FDG311N_NL Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN Fairchild Semiconductor Corporation FDG329N vs FDG311N_NL
FDG311N N-Channel PowerTrench® MOSFET, 2.5V Specified, 1.9 A, 115 mΩ, 3000-REEL onsemi FDG329N vs FDG311N
SI1426DH-T1-E3 Small Signal Field-Effect Transistor, 2.8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN Vishay Intertechnologies FDG329N vs SI1426DH-T1-E3
SI1426DH Small Signal Field-Effect Transistor, 2.8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN Vishay Siliconix FDG329N vs SI1426DH
FDG327ND87Z Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN Fairchild Semiconductor Corporation FDG329N vs FDG327ND87Z
FDG327N_NL Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN Fairchild Semiconductor Corporation FDG329N vs FDG327N_NL
SI1416EDH-T1-GE3 Small Signal Field-Effect Transistor, 3.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, SOT-363, 6 PIN Vishay Intertechnologies FDG329N vs SI1416EDH-T1-GE3
FDG327NZ 20V N-Channel PowerTrench® MOSFET, 1.5 A, 90 mΩ, 3000-REEL onsemi FDG329N vs FDG327NZ

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