Datasheets
FDG327N by:

N-Channel PowerTrench® MOSFET, 20V, 1.5 A, 90 mΩ, SC-88-6 / SC-70-6 / SOT-363-6, 3000-REEL

Part Details for FDG327N by onsemi

Overview of FDG327N by onsemi

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Price & Stock for FDG327N

Part # Distributor Description Stock Price Buy
Rochester Electronics N-Channel PowerTrench MOSFET, 20V, 1.5 A, 90 mOhm RoHS: Compliant Status: Obsolete Min Qty: 1 28686
  • 1 $0.3250
  • 25 $0.3185
  • 100 $0.3055
  • 500 $0.2925
  • 1,000 $0.2763
$0.2763 / $0.3250 Buy Now
DISTI # FDG327N
TME Transistor: N-MOSFET, unipolar, 20V, 1.5A, 0.42W Min Qty: 3 0
  • 3 $0.2530
  • 25 $0.1520
  • 100 $0.1340
  • 500 $0.1200
  • 3,000 $0.1130
$0.1130 / $0.2530 RFQ

Part Details for FDG327N

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FDG327N Part Data Attributes

FDG327N onsemi
Buy Now Datasheet
Compare Parts:
FDG327N onsemi N-Channel PowerTrench® MOSFET, 20V, 1.5 A, 90 mΩ, SC-88-6 / SC-70-6 / SOT-363-6, 3000-REEL
Pbfree Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Part Package Code SC-88-6 / SC-70-6 / SOT-363-6
Package Description SC-70, 6 PIN
Manufacturer Package Code 419B-02
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 1.5 A
Drain-source On Resistance-Max 0.09 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.38 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDG327N

This table gives cross-reference parts and alternative options found for FDG327N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDG327N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDG327N Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN Fairchild Semiconductor Corporation FDG327N vs FDG327N
Part Number Description Manufacturer Compare
FDG327N Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN Fairchild Semiconductor Corporation FDG327N vs FDG327N
FDG329N 1500mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-70, 6 PIN Rochester Electronics LLC FDG327N vs FDG329N
FDG315N Small Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN Fairchild Semiconductor Corporation FDG327N vs FDG315N
FDG311N Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN Fairchild Semiconductor Corporation FDG327N vs FDG311N
FDG327NZ 1500mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-70, 6 PIN Rochester Electronics LLC FDG327N vs FDG327NZ
FDG311N 1900mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-70, 6 PIN Rochester Electronics LLC FDG327N vs FDG311N

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