Datasheets
FDFS2P753Z by:

Power Field-Effect Transistor, 3A I(D), 30V, 0.162ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SO-8

Part Details for FDFS2P753Z by Fairchild Semiconductor Corporation

Overview of FDFS2P753Z by Fairchild Semiconductor Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for FDFS2P753Z

Part # Distributor Description Stock Price Buy
DISTI # 2156-FDFS2P753Z-ND
DigiKey MOSFET P-CH 30V 3A 8SOIC Min Qty: 1025 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 427940
In Stock
  • 1,025 $0.2900
$0.2900 Buy Now
Rochester Electronics Power Field-Effect Transistor, 3A, 30V, 0.162ohm, P-Channel, MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 427940
  • 1 $0.2958
  • 25 $0.2899
  • 100 $0.2781
  • 500 $0.2662
  • 1,000 $0.2514
$0.2514 / $0.2958 Buy Now
Velocity Electronics Our Stock 2500
RFQ
Chip1Cloud MOSFET P-CH 30V 3A 8-SOIC 29935
RFQ

Part Details for FDFS2P753Z

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FDFS2P753Z Part Data Attributes:

FDFS2P753Z Fairchild Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
FDFS2P753Z Fairchild Semiconductor Corporation Power Field-Effect Transistor, 3A I(D), 30V, 0.162ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SO-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SOIC
Package Description ROHS COMPLIANT, SO-8
Pin Count 8
Manufacturer Package Code 8LD, SOIC,JEDEC MS-012, .150" NARROW BODY, DUAL DAP
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 6 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 3 A
Drain-source On Resistance-Max 0.162 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1.6 W
Pulsed Drain Current-Max (IDM) 16 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

Alternate Parts for FDFS2P753Z

This table gives cross-reference parts and alternative options found for FDFS2P753Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDFS2P753Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDFS2P753AZ Power Field-Effect Transistor, 3A I(D), 30V, 0.115ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 Fairchild Semiconductor Corporation FDFS2P753Z vs FDFS2P753AZ

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