Part Details for FDFS2P102 by Fairchild Semiconductor Corporation
Overview of FDFS2P102 by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FDFS2P102
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | 3.3A, 20V, 0.125ohm, P-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 14802 |
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$0.3964 / $0.4664 | Buy Now |
Part Details for FDFS2P102
FDFS2P102 CAD Models
FDFS2P102 Part Data Attributes:
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FDFS2P102
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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FDFS2P102
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 3.3A I(D), 20V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | SOT | |
Package Description | SO-8 | |
Pin Count | 8 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 3.3 A | |
Drain-source On Resistance-Max | 0.125 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 2 W | |
Pulsed Drain Current-Max (IDM) | 20 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FDFS2P102
This table gives cross-reference parts and alternative options found for FDFS2P102. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDFS2P102, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FDFS2P102A | Power Field-Effect Transistor, 3.3A I(D), 20V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Rochester Electronics LLC | FDFS2P102 vs FDFS2P102A |
FDFS2P102A | Power Field-Effect Transistor, 3.3A I(D), 20V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | FDFS2P102 vs FDFS2P102A |