Part Details for FDD8896_NL by Fairchild Semiconductor Corporation
Overview of FDD8896_NL by Fairchild Semiconductor Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (9 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FDD8896_NL
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 28 |
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RFQ | ||
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Chip1Cloud | 9000 |
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RFQ |
Part Details for FDD8896_NL
FDD8896_NL CAD Models
FDD8896_NL Part Data Attributes
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FDD8896_NL
Fairchild Semiconductor Corporation
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Datasheet
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FDD8896_NL
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 17A I(D), 30V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-252AA | |
Package Description | LEAD FREE, DPAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 168 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 17 A | |
Drain-source On Resistance-Max | 0.068 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 80 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FDD8896_NL
This table gives cross-reference parts and alternative options found for FDD8896_NL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDD8896_NL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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ISL9N2357D3ST | Power Field-Effect Transistor, 35A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | Fairchild Semiconductor Corporation | FDD8896_NL vs ISL9N2357D3ST |
FDD6606 | Power Field-Effect Transistor, 75A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | FDD8896_NL vs FDD6606 |
FDD8896 | N-Channel PowerTrench® MOSFET 30V, 94A, 4.7mΩ, 2500-REEL | onsemi | FDD8896_NL vs FDD8896 |
ISL9N2357D3ST | 35A, 30V, 0.007ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | Rochester Electronics LLC | FDD8896_NL vs ISL9N2357D3ST |
FDD6606 | 75A, 30V, 0.006ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | Rochester Electronics LLC | FDD8896_NL vs FDD6606 |
FDD8896 | 17A, 30V, 0.068ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 | Rochester Electronics LLC | FDD8896_NL vs FDD8896 |
ISL9N306AD3ST | 50A, 30V, 0.0095ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA, 3 PIN | Rochester Electronics LLC | FDD8896_NL vs ISL9N306AD3ST |
FDD6606_NL | Power Field-Effect Transistor, 75A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | FDD8896_NL vs FDD6606_NL |
FDD8896 | Power Field-Effect Transistor, 17A I(D), 30V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Fairchild Semiconductor Corporation | FDD8896_NL vs FDD8896 |