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Transistors Power Field-Effect Transistors FDD8770

Transistors
FDD8770
Description: Power Field-Effect Transistor, 35A I(D), 25V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3

Overview of FDD8770 by Fairchild Semiconductor Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for FDD8770 by Fairchild Semiconductor Corporation

Part # Manufacturer Description Stock Price Buy
DISTI # 2156-FDD8770-ND
DigiKey POWER FIELD-EFFECT TRANSISTOR, 3 Min Qty: 742 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 51479
In Stock
  • 742 $0.4000
$0.4000 Buy Now
Bristol Electronics   Min Qty: 7 549
  • 7 $0.8250
  • 26 $0.5363
  • 95 $0.3094
  • 325 $0.2640
$0.2640 / $0.8250 Buy Now
Bristol Electronics   58
RFQ
Quest Components 35A, 25V, 0.0055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 439
  • 1 $1.1000
  • 24 $0.5500
  • 110 $0.3300
$0.3300 / $1.1000 Buy Now
Rochester Electronics Power Field-Effect Transistor, 35A, 25V, 0.0055ohm, N-Channel, MOSFET, TO-252AA RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 1
  • 1 $0.4086
  • 25 $0.4004
  • 100 $0.3841
  • 500 $0.3677
  • 1,000 $0.3473
$0.3473 / $0.4086 Buy Now

CAD Models for FDD8770 by Fairchild Semiconductor Corporation
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Part Data Attributes for FDD8770 by Fairchild Semiconductor Corporation
Parametric Data

FDD8770
Fairchild Semiconductor Corporation
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
Part Package Code
DPAK
Package Description
ROHS COMPLIANT, DPAK-3
Pin Count
3
Manufacturer Package Code
TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
Reach Compliance Code
not_compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Avalanche Energy Rating (Eas)
113 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
25 V
Drain Current-Max (ID)
35 A
Drain-source On Resistance-Max
0.0055 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
115 W
Pulsed Drain Current-Max (IDM)
407 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. FDD8770
    Fairchild Semiconductor Corporation
    Power Field-Effect Transistor, 35A I(D), 25V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3
    VS

Alternate Parts for FDD8770

This table gives cross-reference parts and alternative options found for FDD8770. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDD8770, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
NDB706AL 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Texas Instruments FDD8770 vs NDB706AL
IPB80N06S2LH5ATMA1 Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG FDD8770 vs IPB80N06S2LH5ATMA1
STH8NA60FI 5A, 600V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218, ISOWATT218, 3 PIN STMicroelectronics FDD8770 vs STH8NA60FI
IXFH14N80 Power Field-Effect Transistor, 14A I(D), 800V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN Littelfuse Inc FDD8770 vs IXFH14N80
IXFH7N90Q Power Field-Effect Transistor, 7A I(D), 900V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 Littelfuse Inc FDD8770 vs IXFH7N90Q
STW80NF55-06 80A, 55V, 0.0065ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC, TO-247, 3 PIN STMicroelectronics FDD8770 vs STW80NF55-06
STP19N06 19A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics FDD8770 vs STP19N06
STD5NE10T4 5A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 STMicroelectronics FDD8770 vs STD5NE10T4
NDB705BEL TRANSISTOR 70 A, 50 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, FET General Purpose Power National Semiconductor Corporation FDD8770 vs NDB705BEL
STD12N05-1 12A, 50V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, TO-251, IPAK-3 STMicroelectronics FDD8770 vs STD12N05-1

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