Part Details for FDD8444L-F085 by onsemi
Results Overview of FDD8444L-F085 by onsemi
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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FDD8444L-F085 Information
FDD8444L-F085 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDD8444L-F085
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | FDD8444L_F085 - N-Channel PowerTrench MOSFET, 40V, 50A, 6.0m, RoHS: Compliant Status: Obsolete Min Qty: 1 | 4213 |
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$0.7919 / $0.9317 | Buy Now |
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DISTI #
FDD8444L-F085
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Avnet Silica | Trans MOSFET NCH 40V 16A 3Pin2Tab TO252 TR (Alt: FDD8444L-F085) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 143 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
FDD8444L-F085
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EBV Elektronik | Trans MOSFET NCH 40V 16A 3Pin2Tab TO252 TR (Alt: FDD8444L-F085) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Vyrian | Transistors | 5143 |
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RFQ |
Part Details for FDD8444L-F085
FDD8444L-F085 CAD Models
FDD8444L-F085 Part Data Attributes
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FDD8444L-F085
onsemi
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Datasheet
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Compare Parts:
FDD8444L-F085
onsemi
N-Channel PowerTrench® MOSFET, 40V, 50A, 6.0mΩ,, TO-252 3L (DPAK), 2500-REEL, Automotive Qualified
Select a part to compare: |
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-252 3L (DPAK) | |
| Package Description | DPAK-3/2 | |
| Manufacturer Package Code | 369AS | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 295 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain-source On Resistance-Max | 0.0065 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 153 W | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |