Datasheets
FDD6N50TM_F085 by:

500V, 6A, 760mΩ, DPAK N-Channel UniFET, TO-252 3L (DPAK), 30000-TAPE REEL

Part Details for FDD6N50TM_F085 by onsemi

Overview of FDD6N50TM_F085 by onsemi

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Available Datasheets

Part # Manufacturer Description Datasheet
UPD78F0856MAA-FAA-G Renesas Electronics Corporation 8-bit Microcontrollers (Non Promotion), , /

Part Details for FDD6N50TM_F085

FDD6N50TM_F085 CAD Models

FDD6N50TM_F085 Part Data Attributes

FDD6N50TM_F085 onsemi
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FDD6N50TM_F085 onsemi 500V, 6A, 760mΩ, DPAK N-Channel UniFET, TO-252 3L (DPAK), 30000-TAPE REEL
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ON SEMICONDUCTOR
Package Description SMALL OUTLINE, R-PSSO-G2
Manufacturer Package Code TO252A03
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 270 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 6 A
Drain-source On Resistance-Max 0.9 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 89 W
Pulsed Drain Current-Max (IDM) 24 A
Qualification Status Not Qualified
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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