Part Details for FDD6N25TF by Fairchild Semiconductor Corporation
Results Overview of FDD6N25TF by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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FDD6N25TF Information
FDD6N25TF by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDD6N25TF
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | 4.4A, 250V, 1.1ohm, N-Channel Power MOSFET, TO-252AA RoHS: Compliant Status: Obsolete Min Qty: 1 | 6 |
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$0.2763 / $0.3250 | Buy Now |
Part Details for FDD6N25TF
FDD6N25TF CAD Models
FDD6N25TF Part Data Attributes
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FDD6N25TF
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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FDD6N25TF
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3
Select a part to compare: |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-252AA | |
Package Description | LEAD FREE, DPAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | FAST SWITCHING | |
Avalanche Energy Rating (Eas) | 45 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 250 V | |
Drain Current-Max (ID) | 4.4 A | |
Drain-source On Resistance-Max | 1.1 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 50 W | |
Pulsed Drain Current-Max (IDM) | 18 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FDD6N25TF
This table gives cross-reference parts and alternative options found for FDD6N25TF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDD6N25TF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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FDD6N25TF | Rochester Electronics LLC | Check for Price | 4.4A, 250V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, LEAD FREE, DPAK-3 | FDD6N25TF vs FDD6N25TF |
FDD6N25TM | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | FDD6N25TF vs FDD6N25TM |