Datasheets
FDD6N25TF by:
Fairchild Semiconductor Corporation
Fairchild Semiconductor Corporation
Rochester Electronics LLC
Not Found

Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3

Part Details for FDD6N25TF by Fairchild Semiconductor Corporation

Results Overview of FDD6N25TF by Fairchild Semiconductor Corporation

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

FDD6N25TF Information

FDD6N25TF by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FDD6N25TF

Part # Distributor Description Stock Price Buy
Rochester Electronics 4.4A, 250V, 1.1ohm, N-Channel Power MOSFET, TO-252AA RoHS: Compliant Status: Obsolete Min Qty: 1 6
  • 1 $0.3250
  • 25 $0.3185
  • 100 $0.3055
  • 500 $0.2925
  • 1,000 $0.2763
$0.2763 / $0.3250 Buy Now

Part Details for FDD6N25TF

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FDD6N25TF Part Data Attributes

FDD6N25TF Fairchild Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
FDD6N25TF Fairchild Semiconductor Corporation Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-252AA
Package Description LEAD FREE, DPAK-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature FAST SWITCHING
Avalanche Energy Rating (Eas) 45 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 250 V
Drain Current-Max (ID) 4.4 A
Drain-source On Resistance-Max 1.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 50 W
Pulsed Drain Current-Max (IDM) 18 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDD6N25TF

This table gives cross-reference parts and alternative options found for FDD6N25TF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDD6N25TF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FDD6N25TF Rochester Electronics LLC Check for Price 4.4A, 250V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, LEAD FREE, DPAK-3 FDD6N25TF vs FDD6N25TF
FDD6N25TM Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 FDD6N25TF vs FDD6N25TM

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