Part Details for FDD6680S by Fairchild Semiconductor Corporation
Overview of FDD6680S by Fairchild Semiconductor Corporation
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (4 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FDD6680S
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-FDD6680S-ND
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DigiKey | N-CHANNEL POWER MOSFET Min Qty: 197 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
31202 In Stock |
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$1.5300 | Buy Now |
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Quest Components | 55 A, 30 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 | 2070 |
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$1.0395 / $2.4750 | Buy Now |
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Rochester Electronics | 55A, 30V, N-Channel Power MOSFET, TO-252 ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 31202 |
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RFQ |
Part Details for FDD6680S
FDD6680S CAD Models
FDD6680S Part Data Attributes
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FDD6680S
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
FDD6680S
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 55A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-252 | |
| Package Description | DPAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 245 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 55 A | |
| Drain-source On Resistance-Max | 0.011 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 60 W | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDD6680S
This table gives cross-reference parts and alternative options found for FDD6680S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDD6680S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FDD6680AS_NL | Power Field-Effect Transistor, 55A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, TO-252, 3 PIN | Fairchild Semiconductor Corporation | FDD6680S vs FDD6680AS_NL |
| FDD6680AS | Power Field-Effect Transistor, 55A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN | Fairchild Semiconductor Corporation | FDD6680S vs FDD6680AS |
| FDD6680AS | N-Channel PowerTrench® SyncFET™ MOSFET, 30V, 55A, 10.5mΩ, DPAK-3 / TO-252-3, 2500-REEL | onsemi | FDD6680S vs FDD6680AS |
| FDD6680S | 55A, 30V, 0.011ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | Rochester Electronics LLC | FDD6680S vs FDD6680S |