Part Details for FDD6680AS by Fairchild Semiconductor Corporation
Overview of FDD6680AS by Fairchild Semiconductor Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (3 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FDD6680AS
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-FDD6680AS-ND
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DigiKey | MOSFET N-CH 30V 55A TO252 Min Qty: 528 Container: Bulk MARKETPLACE PRODUCT |
9341 In Stock |
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$0.5700 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, 55A, 30V, 0.0105ohm, N-Channel, MOSFET, TO-252 ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 9341 |
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$0.4882 / $0.5743 | Buy Now |
Part Details for FDD6680AS
FDD6680AS CAD Models
FDD6680AS Part Data Attributes:
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FDD6680AS
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
FDD6680AS
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 55A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | DPAK | |
| Package Description | TO-252, 3 PIN | |
| Pin Count | 3 | |
| Manufacturer Package Code | TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 205 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 55 A | |
| Drain-source On Resistance-Max | 0.0105 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 60 W | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDD6680AS
This table gives cross-reference parts and alternative options found for FDD6680AS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDD6680AS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FDD6680AS_NL | Power Field-Effect Transistor, 55A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, TO-252, 3 PIN | Fairchild Semiconductor Corporation | FDD6680AS vs FDD6680AS_NL |
| FDD6680S_NL | Power Field-Effect Transistor, 55A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | FDD6680AS vs FDD6680S_NL |
| FDD6680S | 55A, 30V, 0.011ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | Rochester Electronics LLC | FDD6680AS vs FDD6680S |