Part Details for FDD6680A by Fairchild Semiconductor Corporation
Overview of FDD6680A by Fairchild Semiconductor Corporation
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for FDD6680A
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 23243 |
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RFQ | ||
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Bristol Electronics | Min Qty: 3 | 37732 |
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$0.6757 / $2.0475 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-252AA | 5041 |
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$1.0395 / $2.4750 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-252AA | 2000 |
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$0.3686 / $1.4175 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-252AA | 16000 |
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$0.7508 / $2.7300 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-252AA | 10000 |
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$1.4850 / $3.9600 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-252AA | 998 |
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$1.4850 / $3.9600 | Buy Now |
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Rochester Electronics | 14A, 30V, N-Channel Power MOSFET, TO-252 ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 204395 |
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$1.3200 / $1.5500 | Buy Now |
Part Details for FDD6680A
FDD6680A CAD Models
FDD6680A Part Data Attributes:
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FDD6680A
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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FDD6680A
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 14A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-252 | |
Package Description | DPAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Additional Feature | FAST SWITCHING | |
Avalanche Energy Rating (Eas) | 174 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 14 A | |
Drain-source On Resistance-Max | 0.0095 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 60 W | |
Pulsed Drain Current-Max (IDM) | 100 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |