Datasheets
FDD6612A by:

N-Channel PowerTrench® MOSFET, 30V, 30A, 20mΩ, DPAK-3 / TO-252-3, 2500-REEL

Part Details for FDD6612A by onsemi

Overview of FDD6612A by onsemi

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Price & Stock for FDD6612A

Part # Distributor Description Stock Price Buy
Bristol Electronics   1036
RFQ
Bristol Electronics   103
RFQ
Quest Components MOSFET Transistor, N-Channel, TO-252AA 828
  • 1 $1.6145
  • 63 $0.8073
  • 249 $0.6458
$0.6458 / $1.6145 Buy Now
Rochester Electronics Power Field-Effect Transistor, 9.5A, 30V, 0.02ohm, N-Channel, MOSFET, TO-252 RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 16527
RFQ

Part Details for FDD6612A

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FDD6612A Part Data Attributes

FDD6612A onsemi
Buy Now Datasheet
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FDD6612A onsemi N-Channel PowerTrench® MOSFET, 30V, 30A, 20mΩ, DPAK-3 / TO-252-3, 2500-REEL
Pbfree Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Part Package Code DPAK-3 / TO-252-3
Package Description DPAK-3
Manufacturer Package Code 369AS
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 90 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 9.5 A
Drain-source On Resistance-Max 0.02 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 36 W
Pulsed Drain Current-Max (IDM) 60 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDD6612A

This table gives cross-reference parts and alternative options found for FDD6612A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDD6612A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
ISL9N322AD3ST Power Field-Effect Transistor, 20A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Fairchild Semiconductor Corporation FDD6612A vs ISL9N322AD3ST
FDD6612A 9.5A, 30V, 0.02ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 Rochester Electronics LLC FDD6612A vs FDD6612A
ISL9N327AD3ST 20A, 30V, 0.027ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Rochester Electronics LLC FDD6612A vs ISL9N327AD3ST
ISL9N327AD3ST Power Field-Effect Transistor, 20A I(D), 30V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Fairchild Semiconductor Corporation FDD6612A vs ISL9N327AD3ST
FDD6612A Power Field-Effect Transistor, 9.5A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation FDD6612A vs FDD6612A
Part Number Description Manufacturer Compare
ISL9N322AD3ST Power Field-Effect Transistor, 20A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Fairchild Semiconductor Corporation FDD6612A vs ISL9N322AD3ST
ISL9N327AD3ST Power Field-Effect Transistor, 20A I(D), 30V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Fairchild Semiconductor Corporation FDD6612A vs ISL9N327AD3ST
FDD6612A Power Field-Effect Transistor, 9.5A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation FDD6612A vs FDD6612A
FDD6612A 9.5A, 30V, 0.02ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 Rochester Electronics LLC FDD6612A vs FDD6612A

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