Part Details for FDD6612A by onsemi
Overview of FDD6612A by onsemi
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (5 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FDD6612A
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 1036 |
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RFQ | ||
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Bristol Electronics | 103 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, TO-252AA | 828 |
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$0.6458 / $1.6145 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, 9.5A, 30V, 0.02ohm, N-Channel, MOSFET, TO-252 RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 16527 |
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RFQ |
Part Details for FDD6612A
FDD6612A CAD Models
FDD6612A Part Data Attributes
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FDD6612A
onsemi
Buy Now
Datasheet
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Compare Parts:
FDD6612A
onsemi
N-Channel PowerTrench® MOSFET, 30V, 30A, 20mΩ, DPAK-3 / TO-252-3, 2500-REEL
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Pbfree Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | DPAK-3 / TO-252-3 | |
Package Description | DPAK-3 | |
Manufacturer Package Code | 369AS | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | onsemi | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Avalanche Energy Rating (Eas) | 90 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 9.5 A | |
Drain-source On Resistance-Max | 0.02 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 36 W | |
Pulsed Drain Current-Max (IDM) | 60 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FDD6612A
This table gives cross-reference parts and alternative options found for FDD6612A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDD6612A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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ISL9N322AD3ST | Power Field-Effect Transistor, 20A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | Fairchild Semiconductor Corporation | FDD6612A vs ISL9N322AD3ST |
FDD6612A | 9.5A, 30V, 0.02ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | Rochester Electronics LLC | FDD6612A vs FDD6612A |
ISL9N327AD3ST | 20A, 30V, 0.027ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | Rochester Electronics LLC | FDD6612A vs ISL9N327AD3ST |
ISL9N327AD3ST | Power Field-Effect Transistor, 20A I(D), 30V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | Fairchild Semiconductor Corporation | FDD6612A vs ISL9N327AD3ST |
FDD6612A | Power Field-Effect Transistor, 9.5A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | FDD6612A vs FDD6612A |