Part Details for FDD6512A by Fairchild Semiconductor Corporation
Overview of FDD6512A by Fairchild Semiconductor Corporation
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Energy and Power Systems
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Renewable Energy
Automotive
Price & Stock for FDD6512A
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 10.7 A, 20 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 | 794 |
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$0.3535 / $0.8484 | Buy Now |
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Rochester Electronics | 10.7A, 20V, 0.021ohm, N-Channel Power MOSFET, TO-252 RoHS: Compliant Status: Obsolete Min Qty: 1 | 516130 |
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$0.3771 / $0.4436 | Buy Now |
Part Details for FDD6512A
FDD6512A CAD Models
FDD6512A Part Data Attributes
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FDD6512A
Fairchild Semiconductor Corporation
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Datasheet
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FDD6512A
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 10.7A I(D), 20V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-252 | |
| Package Description | DPAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 90 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 10.7 A | |
| Drain-source On Resistance-Max | 0.021 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 43 W | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDD6512A
This table gives cross-reference parts and alternative options found for FDD6512A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDD6512A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FDD6512A_NL | Power Field-Effect Transistor, 10.7A I(D), 20V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | FDD6512A vs FDD6512A_NL |