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Transistors / Power Field-Effect Transistors / FDD5680
Datasheets
FDD5680 by:

N-Channel PowerTrench® MOSFET, 38A, 21mΩ, DPAK-3 / TO-252-3, 2500-REEL

Part Details for FDD5680 by onsemi

Overview of FDD5680 by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for FDD5680

Part # Distributor Description Stock Price Buy
DISTI # 58K1436
Newark Mosfet, 60V, 8.5A, To-252, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:8.5A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.4V, No. Of Pins:3Pinsrohs Compliant: Yes |Onsemi FDD5680 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 1,000 $0.6060
$0.6060 Buy Now
DISTI # FDD5680CT-ND
DigiKey MOSFET N-CH 60V 8.5A TO252 Min Qty: 1 Lead time: 33 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 2127
In Stock
  • 1 $1.5000
  • 10 $1.0140
  • 100 $0.7133
  • 500 $0.5789
  • 1,000 $0.5349
  • 2,500 $0.4981
$0.4981 / $1.5000 Buy Now
DISTI # FDD5680
Avnet Americas Trans MOSFET N-CH 60V 38A 3-Pin(2+Tab) TO-252AA T/R - Tape and Reel (Alt: FDD5680) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 33 Weeks, 0 Days Container: Reel 2500 Factory Stock
  • 2,500 $0.4860
  • 5,000 $0.4801
  • 10,000 $0.4744
  • 15,000 $0.4722
  • 20,000 $0.4688
$0.4688 / $0.4860 Buy Now
DISTI # 512-FDD5680
Mouser Electronics MOSFETs N-Ch PowerTrench RoHS: Compliant 2171
  • 1 $1.5000
  • 10 $1.0200
  • 100 $0.7130
  • 500 $0.5790
  • 1,000 $0.5350
  • 2,500 $0.4980
$0.4980 / $1.5000 Buy Now
Future Electronics N-Channel 60 V 21 mOhm Surface Mount PowerTrench Mosfet TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 33 Weeks Container: Reel 0
Reel
  • 2,500 $0.5100
  • 5,000 $0.4950
  • 7,500 $0.4850
$0.4850 / $0.5100 Buy Now
Future Electronics N-Channel 60 V 21 mOhm Surface Mount PowerTrench Mosfet TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks Container: Reel 0
Reel
  • 2,500 $0.5100
  • 5,000 $0.4950
  • 7,500 $0.4850
$0.4850 / $0.5100 Buy Now
Onlinecomponents.com N-Channel 60 V 21 mOhm Surface Mount PowerTrench Mosfet TO-252-3 RoHS: Compliant 0
  • 2,500 $0.5109
  • 5,000 $0.5032
  • 7,500 $0.4920
  • 10,000 $0.4846
  • 15,000 $0.4773
$0.4773 / $0.5109 Buy Now
Rochester Electronics Power Field-Effect Transistor, 38A, 60V, 0.021ohm, N-Channel, MOSFET, TO-252 RoHS: Compliant Status: Active Min Qty: 1 5058
  • 1 $0.5535
  • 25 $0.5424
  • 100 $0.5203
  • 500 $0.4982
  • 1,000 $0.4705
$0.4705 / $0.5535 Buy Now
DISTI # FDD5680
TME Transistor: N-MOSFET, unipolar, 60V, 8.5A, Idm: 100A, 60W, DPAK Min Qty: 1 0
  • 1 $1.2580
  • 10 $1.0430
  • 100 $0.7850
  • 500 $0.6450
  • 1,000 $0.6240
$0.6240 / $1.2580 RFQ
DISTI # FDD5680
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 2500 0
  • 2,500 $0.5000
$0.5000 Buy Now
DISTI # FDD5680
Avnet Silica Trans MOSFET N-CH 60V 38A 3-Pin(2+Tab) TO-252AA T/R (Alt: FDD5680) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 34 Weeks, 0 Days Silica - 0
Buy Now
DISTI # FDD5680
EBV Elektronik Trans MOSFET N-CH 60V 38A 3-Pin(2+Tab) TO-252AA T/R (Alt: FDD5680) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 35 Weeks, 0 Days EBV - 0
Buy Now

Part Details for FDD5680

FDD5680 CAD Models

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FDD5680 Part Data Attributes

Parametric Data
FDD5680 onsemi
Buy Now Datasheet
Compare Parts:
FDD5680 onsemi N-Channel PowerTrench® MOSFET, 38A, 21mΩ, DPAK-3 / TO-252-3, 2500-REEL
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code DPAK-3 / TO-252-3
Package Description TO-252, 3 PIN
Manufacturer Package Code 369AS
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 33 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 140 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 38 A
Drain-source On Resistance-Max 0.021 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 60 W
Pulsed Drain Current-Max (IDM) 100 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDD5680

This table gives cross-reference parts and alternative options found for FDD5680. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDD5680, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NTD20N06LG Single N-Channel Logic Level Power MOSFET 60V, 20A, 48mΩ, DPAK (SINGLE GAUGE) TO-252, 75-TUBE onsemi FDD5680 vs NTD20N06LG
NTD20N06L-001 20A, 60V, 0.048ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369D-01, DPAK-3 onsemi FDD5680 vs NTD20N06L-001
NTD20N06L-1G Single N-Channel Logic Level Power MOSFET 60V, 20A, 48mΩ, DPAK INSERTION MOUNT, 75-TUBE onsemi FDD5680 vs NTD20N06L-1G
Part Number Description Manufacturer Compare
NTDV20N06T4G-VF01 Single N-Channel Power MOSFET 60V 20A 46mΩ, DPAK-3, 2500-REEL, Automotive Qualified onsemi FDD5680 vs NTDV20N06T4G-VF01
NTD20N06LG Single N-Channel Logic Level Power MOSFET 60V, 20A, 48mΩ, DPAK (SINGLE GAUGE) TO-252, 75-TUBE onsemi FDD5680 vs NTD20N06LG
NTD20N06L-001 20A, 60V, 0.048ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369D-01, DPAK-3 onsemi FDD5680 vs NTD20N06L-001
NTD20N06L-1G Single N-Channel Logic Level Power MOSFET 60V, 20A, 48mΩ, DPAK INSERTION MOUNT, 75-TUBE onsemi FDD5680 vs NTD20N06L-1G
IRFR4105TR Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 International Rectifier FDD5680 vs IRFR4105TR
IRFU4105 Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, PLASTIC, IPAK-3 International Rectifier FDD5680 vs IRFU4105
IRFR4105 Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 Infineon Technologies AG FDD5680 vs IRFR4105
IRFR4105TRRPBF Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 Infineon Technologies AG FDD5680 vs IRFR4105TRRPBF
NTD20N06T4G Single N-Channel Power MOSFET 60V, 20A, 46mΩ, DPAK (SINGLE GAUGE) TO-252, 2500-REEL onsemi FDD5680 vs NTD20N06T4G
SPD25N06S240NTMA1 Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, PLASTIC PACKAGE-3 Infineon Technologies AG FDD5680 vs SPD25N06S240NTMA1

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