Datasheets
FDD5614P by:

Power Field-Effect Transistor, 15A I(D), 60V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN

Part Details for FDD5614P by Fairchild Semiconductor Corporation

Overview of FDD5614P by Fairchild Semiconductor Corporation

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Price & Stock for FDD5614P

Part # Distributor Description Stock Price Buy
Bristol Electronics   42
RFQ
Bristol Electronics   7
RFQ
DISTI # SMC-FDD5614P
Sensible Micro Corporation XMOSFET P-CH 60V 15A DPAK RoHS: Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days Date Code: 2018+ Container: Tape & Reel 620
  • 100 $0.2399
  • 500 $0.2288
  • 1,000 $0.2230
$0.2230 / $0.2399 RFQ
Chip1Cloud MOSFET P-CH 60V 15A DPAK 6804
RFQ
Sense Electronic Company Limited TO-252 2463
RFQ
Win Source Electronics MOSFET P-CH 60V 15A DPAK 676190
  • 105 $0.4810
  • 255 $0.3950
  • 395 $0.3820
  • 545 $0.3700
  • 700 $0.3580
  • 935 $0.3210
$0.3210 / $0.4810 Buy Now

Part Details for FDD5614P

FDD5614P CAD Models

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FDD5614P Part Data Attributes:

FDD5614P Fairchild Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
FDD5614P Fairchild Semiconductor Corporation Power Field-Effect Transistor, 15A I(D), 60V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code DPAK
Package Description TO-252, 3 PIN
Pin Count 3
Manufacturer Package Code TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 90 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 15 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 42 W
Pulsed Drain Current-Max (IDM) 45 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDD5614P

This table gives cross-reference parts and alternative options found for FDD5614P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDD5614P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDD5614P_NL Power Field-Effect Transistor, 15A I(D), 60V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN Fairchild Semiconductor Corporation FDD5614P vs FDD5614P_NL
Part Number Description Manufacturer Compare
FDD5614P_NL Power Field-Effect Transistor, 15A I(D), 60V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN Fairchild Semiconductor Corporation FDD5614P vs FDD5614P_NL

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